RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Samsung 1600 CL10 Series 8GB
Crucial Technology BL16G30C15U4R.M16FE1 16GB

Samsung 1600 CL10 Series 8GB vs Crucial Technology BL16G30C15U4R.M16FE1 16GB

总分
star star star star star
Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分
star star star star star
Crucial Technology BL16G30C15U4R.M16FE1 16GB

Crucial Technology BL16G30C15U4R.M16FE1 16GB

差异 规格 评论

差异

Samsung 1600 CL10 Series 8GB 需要考虑的原因
Samsung 1600 CL10 Series 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 30
    左右 17% 更低的延时
Crucial Technology BL16G30C15U4R.M16FE1 16GB 需要考虑的原因
Crucial Technology BL16G30C15U4R.M16FE1 16GB
报告一个错误
  • 更快的读取速度，GB/s
    20.8 left arrow 16.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.4 left arrow 10.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung 1600 CL10 Series 8GB
Crucial Technology BL16G30C15U4R.M16FE1 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 30
  • 读取速度，GB/s
    16.1 left arrow 20.8
  • 写入速度，GB/s
    10.1 left arrow 16.4
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2764 left arrow 3703

Samsung 1600 CL10 Series 8GB RAM的比较

G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB

Crucial Technology BL16G30C15U4R.M16FE1 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Crucial Technology BL16G30C15U4R.M16FE1 16GB
Crucial Technology BL16G30C15U4R.M16FE1 16GB
内存RAM
Kingston KHX2800C14D4/8GX 8GB
Kingston KHX2800C14D4/8GX 8GB
EVGA 16G-D4-2800-MR 4GB
EVGA 16G-D4-2800-MR 4GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Apacer Technology 78.CAGSZ.4070B 8GB
Apacer Technology 78.CAGSZ.4070B 8GB
内存RAM
SK Hynix HYMP512U64CP8-Y5 1GB
SK Hynix HYMP512U64CP8-Y5 1GB
Transcend Information TS1GSH64V4B 8GB
Transcend Information TS1GSH64V4B 8GB
内存RAM
Kingston K531R8-MIN 4GB
Kingston K531R8-MIN 4GB
Kingston 9905711-007.A00G 4GB
Kingston 9905711-007.A00G 4GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Kingston HP26D4S9S8MD-8 8GB
Kingston HP26D4S9S8MD-8 8GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Crucial Technology CT4G4SFS824A.C8FF 4GB
Crucial Technology CT4G4SFS824A.C8FF 4GB
内存RAM
G Skill Intl F2-5300CL4-1GBSA 1GB
G Skill Intl F2-5300CL4-1GBSA 1GB
Corsair CMR64GX4M8C3000C15 8GB
Corsair CMR64GX4M8C3000C15 8GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Micron Technology 9ASF51272AZ-2G3B1 4GB
Micron Technology 9ASF51272AZ-2G3B1 4GB
内存RAM
Kingston KP4T2F-PSB 4GB
Kingston KP4T2F-PSB 4GB
Crucial Technology CT8G4SFRA266.C4FE 8GB
Crucial Technology CT8G4SFRA266.C4FE 8GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Micron Technology ILG8GS2400A 8GB
Micron Technology ILG8GS2400A 8GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
G Skill Intl F4-3200C16-16GFX 16GB
G Skill Intl F4-3200C16-16GFX 16GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
SK Hynix HMA81GU7CJR8N-VK 8GB
SK Hynix HMA81GU7CJR8N-VK 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Apacer Technology 78.CAGN4.4020B 8GB
Apacer Technology 78.CAGN4.4020B 8GB
内存RAM