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Samsung 1600 CL10 Series 8GB
Crucial Technology BLS8G4S240FSDK.8FD 8GB

Samsung 1600 CL10 Series 8GB vs Crucial Technology BLS8G4S240FSDK.8FD 8GB

总分
star star star star star
Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分
star star star star star
Crucial Technology BLS8G4S240FSDK.8FD 8GB

Crucial Technology BLS8G4S240FSDK.8FD 8GB

差异 规格 评论

差异

Samsung 1600 CL10 Series 8GB 需要考虑的原因
Samsung 1600 CL10 Series 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 50
    左右 50% 更低的延时
  • 更快的读取速度，GB/s
    16.1 left arrow 13.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.1 left arrow 8.5
    测试中的平均数值
Crucial Technology BLS8G4S240FSDK.8FD 8GB 需要考虑的原因
Crucial Technology BLS8G4S240FSDK.8FD 8GB
报告一个错误
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Samsung 1600 CL10 Series 8GB
Crucial Technology BLS8G4S240FSDK.8FD 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 50
  • 读取速度，GB/s
    16.1 left arrow 13.5
  • 写入速度，GB/s
    10.1 left arrow 8.5
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2764 left arrow 2424

Samsung 1600 CL10 Series 8GB RAM的比较

G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB

Crucial Technology BLS8G4S240FSDK.8FD 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM