Samsung 1600 CL10 Series 8GB vs Crucial Technology CT16G4DFRA32A.C8FB 16GB

总分

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分

Crucial Technology CT16G4DFRA32A.C8FB 16GB

Crucial Technology CT16G4DFRA32A.C8FB 16GB

差异规格评论

差异

Samsung 1600 CL10 Series 8GB

需要考虑的原因
Samsung 1600 CL10 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 35

左右 29% 更低的延时

Crucial Technology CT16G4DFRA32A.C8FB 16GB

需要考虑的原因
Crucial Technology CT16G4DFRA32A.C8FB 16GB

报告一个错误

更快的读取速度，GB/s

18.7 16.1

测试中的平均数值
更快的写入速度，GB/s

13.6 10.1

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung 1600 CL10 Series 8GB

Crucial Technology CT16G4DFRA32A.C8FB 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 35
读取速度，GB/s

16.1 18.7
写入速度，GB/s

10.1 13.6
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2764 3423

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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Micron Technology 16ATF2G64AZ-2G6J1 16GB

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Ramaxel Technology RMN1740HC48D8F667A 2GB

AMD R7416G2400U2S 16GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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Kingston 99U5474-010.A00LF 2GB

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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

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Samsung M393A2G40DB0-CPB 16GB

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMK32GX4M2E3200C16 16GB

Corsair CMK32GX4M2E3200C16 16GB

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SK Hynix HMA82GR8AMR4N-TF 16GB

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A-DATA Technology DDR3 1866 2OZ 4GB

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Chun Well Technology Holding Limited ND4U0840180BRPDE 8