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Samsung 1600 CL10 Series 8GB
Crucial Technology CT16G4SFRA266.C8FB 16GB

Samsung 1600 CL10 Series 8GB vs Crucial Technology CT16G4SFRA266.C8FB 16GB

总分
star star star star star
Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分
star star star star star
Crucial Technology CT16G4SFRA266.C8FB 16GB

Crucial Technology CT16G4SFRA266.C8FB 16GB

差异 规格 评论

差异

Samsung 1600 CL10 Series 8GB 需要考虑的原因
Samsung 1600 CL10 Series 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 41
    左右 39% 更低的延时
  • 更快的读取速度，GB/s
    16.1 left arrow 14.3
    测试中的平均数值
Crucial Technology CT16G4SFRA266.C8FB 16GB 需要考虑的原因
Crucial Technology CT16G4SFRA266.C8FB 16GB
报告一个错误
  • 更快的写入速度，GB/s
    11.1 left arrow 10.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung 1600 CL10 Series 8GB
Crucial Technology CT16G4SFRA266.C8FB 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 41
  • 读取速度，GB/s
    16.1 left arrow 14.3
  • 写入速度，GB/s
    10.1 left arrow 11.1
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2764 left arrow 2656

Samsung 1600 CL10 Series 8GB RAM的比较

G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB

Crucial Technology CT16G4SFRA266.C8FB 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

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Hexon Technology Pte Ltd HEXON 1GB
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内存RAM
Samsung 1600 CL10 Series 8GB
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Crucial Technology CT16G4SFRA266.C8FB 16GB
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内存RAM
Samsung M393B1K70CH0-CH9 8GB
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G Skill Intl F3-14900CL8-4GBXM 4GB
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内存RAM
Kingston KP223C-ELD 2GB
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内存RAM
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内存RAM
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SK Hynix GKE800UD102408-2400 8GB
内存RAM
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Kingston ACR256X64D3S1333C9 2GB
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内存RAM
ASint Technology SSA302G08-EGN1C 4GB
ASint Technology SSA302G08-EGN1C 4GB
Micron Technology 16ATF2G64HZ-2G3B1 16GB
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内存RAM
Samsung DDR3 8GB 1600MHz 8GB
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内存RAM
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Nanya Technology NT2GC64B8HC0NS-CG 2GB
Kingston 9905701-008.A00G 16GB
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内存RAM