Samsung 1600 CL10 Series 8GB vs Crucial Technology CT32G4DFD8266.C16FE 32GB

总分

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分

Crucial Technology CT32G4DFD8266.C16FE 32GB

Crucial Technology CT32G4DFD8266.C16FE 32GB

差异规格评论

差异

Samsung 1600 CL10 Series 8GB

需要考虑的原因
Samsung 1600 CL10 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 34

左右 26% 更低的延时

Crucial Technology CT32G4DFD8266.C16FE 32GB

需要考虑的原因
Crucial Technology CT32G4DFD8266.C16FE 32GB

报告一个错误

更快的读取速度，GB/s

17.9 16.1

测试中的平均数值
更快的写入速度，GB/s

15.2 10.1

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung 1600 CL10 Series 8GB

Crucial Technology CT32G4DFD8266.C16FE 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 34
读取速度，GB/s

16.1 17.9
写入速度，GB/s

10.1 15.2
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2764 3634

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Absolute Latency

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最新比较

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Corsair CMD16GX4M4B3200C16 4GB

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Kingston 9905403-134.A00LF 2GB

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Crucial Technology CT25664AA800.M16FM 2GB

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Crucial Technology CT8G4DFRA32A.C4FE 8GB

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Crucial Technology CT8G4DFRA32A.C4FE 8GB

Kingston HX316C10F/8 8GB

Kingston HX316C10F/8 8GB

Corsair CMK192GX4M12P3200C16 16GB

Corsair CMK192GX4M12P3200C16 16GB

Qimonda 64T128020EDL2.5C2 1GB

Qimonda 64T128020EDL2.5C2 1GB

Crucial Technology BL8G32C16U4RL.M8FE 8GB

Crucial Technology BL8G32C16U4RL.M8FE 8GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

G Skill Intl F4-3200C14-8GTZKY 8GB

G Skill Intl F4-3200C14-8GTZKY 8GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 9ASF51272PZ-2G1B1 4GB

Micron Technology 9ASF51272PZ-2G1B1 4GB