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Samsung 1600 CL10 Series 8GB
Crucial Technology CT4G4SFS8266.M8FE 4GB
比较
Samsung 1600 CL10 Series 8GB vs Crucial Technology CT4G4SFS8266.M8FE 4GB
总分
Samsung 1600 CL10 Series 8GB
总分
Crucial Technology CT4G4SFS8266.M8FE 4GB
差异
规格
评论
差异
需要考虑的原因
Samsung 1600 CL10 Series 8GB
报告一个错误
低于PassMark测试中的延时,ns
25
94
左右 73% 更低的延时
更快的读取速度,GB/s
16.1
13.2
测试中的平均数值
更快的写入速度,GB/s
10.1
6.4
测试中的平均数值
需要考虑的原因
Crucial Technology CT4G4SFS8266.M8FE 4GB
报告一个错误
更高的内存带宽,mbps
21300
12800
左右 1.66 更高的带宽
规格
完整的技术规格清单
Samsung 1600 CL10 Series 8GB
Crucial Technology CT4G4SFS8266.M8FE 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
25
94
读取速度,GB/s
16.1
13.2
写入速度,GB/s
10.1
6.4
内存带宽,mbps
12800
21300
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2764
1390
Samsung 1600 CL10 Series 8GB RAM的比较
G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB
Crucial Technology CT4G4SFS8266.M8FE 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
TwinMOS 8DPT5MK8-TATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Kingston MSI24D4S7D8MB-16 16GB
Peak Electronics 256X64M-67E 2GB
Kingston 9905624-046.A00G 8GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Kingston 9965662-019.A00G 32GB
Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-4400C18-8GTZRC 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Mushkin MR[A/B]4U300JJJM16G 16GB
SK Hynix HMA81GS6DJR8N-VK 8GB
SK Hynix HMA81GS6CJR8N-XN 8GB
Kingston 99U5403-468.A00LF 8GB
Corsair CMSX64GX4M2A2933C19 32GB
Corsair CMX8GX3M2A2000C9 4GB
Corsair CMK16GX4M2Z3200C16 8GB
Kingston 9965525-018.A00LF 4GB
Apacer Technology 78.CAGSZ.4070B 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 99U5700-014.A00G 8GB
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-3600C14-16GTZRA 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
G Skill Intl F4-3466C16-8GTZSW 8GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Crucial Technology CT16G4SFD8213.C16FDD 16GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Micron Technology 8ATF2G64HZ-3G2E1 16GB
报告一个错误
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Bug description
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