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Samsung 1600 CL10 Series 8GB
G Skill Intl F4-3600C19-16GSXK 16GB
比较
Samsung 1600 CL10 Series 8GB vs G Skill Intl F4-3600C19-16GSXK 16GB
总分
Samsung 1600 CL10 Series 8GB
总分
G Skill Intl F4-3600C19-16GSXK 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung 1600 CL10 Series 8GB
报告一个错误
低于PassMark测试中的延时,ns
25
27
左右 7% 更低的延时
更快的读取速度,GB/s
16.1
12.8
测试中的平均数值
需要考虑的原因
G Skill Intl F4-3600C19-16GSXK 16GB
报告一个错误
更快的写入速度,GB/s
16.5
10.1
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-3600C19-16GSXK 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
25
27
读取速度,GB/s
16.1
12.8
写入速度,GB/s
10.1
16.5
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2764
3259
Samsung 1600 CL10 Series 8GB RAM的比较
G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-3600C19-16GSXK 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-156.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
G Skill Intl F4-3200C14-32GTZR 32GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Micron Technology 8ATF1G64AZ-3G2E1 8GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Crucial Technology CT16G4DFD824A.M16FD 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS16G4D240FSB.16FAD 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Kingston HP26D4U9S8ME-8X 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
A-DATA Technology DDR4 4133 2OZ 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Patriot Memory (PDP Systems) 4400 C19 Series 8GB
Kingston 99U5474-010.A00LF 2GB
Micron Technology 4ATF51264HZ-2G6E1 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology AO1P26KCST2-BWWS 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMWX8GF2933Z19W8 8GB
Samsung M3 78T3354BZ0-CCC 256MB
SK Hynix HMAA2GU6CJR8N-XN 16GB
Samsung M393B1G70BH0-CK0 8GB
Corsair CMW64GX4M4E3200C16 16GB
G Skill Intl F5-6400J3239G16G 16GB
Apacer Technology 78.CAGPP.ARW0B 8GB
Kingston 99U5584-001.A00LF 4GB
Patriot Memory (PDP Systems) PSD416G21332S 16GB
报告一个错误
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Bug description
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