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Samsung 1600 CL10 Series 8GB
G Skill Intl F4-4133C17-8GTZR 8GB
比较
Samsung 1600 CL10 Series 8GB vs G Skill Intl F4-4133C17-8GTZR 8GB
总分
Samsung 1600 CL10 Series 8GB
总分
G Skill Intl F4-4133C17-8GTZR 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung 1600 CL10 Series 8GB
报告一个错误
需要考虑的原因
G Skill Intl F4-4133C17-8GTZR 8GB
报告一个错误
更快的读取速度,GB/s
19.5
16.1
测试中的平均数值
更快的写入速度,GB/s
16.2
10.1
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-4133C17-8GTZR 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
25
25
读取速度,GB/s
16.1
19.5
写入速度,GB/s
10.1
16.2
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2764
3890
Samsung 1600 CL10 Series 8GB RAM的比较
G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-4133C17-8GTZR 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology VDQVE1B16 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
G Skill Intl F3-10600CL9-2GBNT 2GB
Crucial Technology CT16G4SFD8213.C16FAD 16GB
SK Hynix HYMP125U64CP8-S6 2GB
Kingston HP32D4U8D8HC-16XR 16GB
PNY Electronics PNY 2GB
G Skill Intl F4-2400C15-4GNT 4GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-4133C17-8GTZR 8GB
Samsung 1600 CL10 Series 8GB
Kingston 9905598-009.A00G 8GB
Samsung M471B5173QH0-YK0 4GB
G Skill Intl F4-2933C16-16GFX 16GB
Golden Empire CL5-5-5DDR2 1GB
Crucial Technology CT32G4SFD832A.M16FB 32GB
G Skill Intl F4-4000C14-16GTZR 16GB
Apacer Technology 78.BAGSR.4030B 4GB
A-DATA Technology DOVF1B163G2G 2GB
Hewlett-Packard 7EH64AA#ABC 8GB
AMD AE34G1601U1 4GB
Kingston 8ATF1G64AZ-2G1B1 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Micron Technology V-GeN D4V16GL24A8R 16GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Micron Technology 8ATF1G64HZ-2G6E3 8GB
Peak Electronics 256X64M-67E 2GB
Crucial Technology BLS16G4S240FSD.16FAD 16GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N
报告一个错误
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Bug description
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