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Samsung 1600 CL10 Series 8GB
G Skill Intl F4-4600C18-8GTRS 8GB
比较
Samsung 1600 CL10 Series 8GB vs G Skill Intl F4-4600C18-8GTRS 8GB
总分
Samsung 1600 CL10 Series 8GB
总分
G Skill Intl F4-4600C18-8GTRS 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung 1600 CL10 Series 8GB
报告一个错误
需要考虑的原因
G Skill Intl F4-4600C18-8GTRS 8GB
报告一个错误
低于PassMark测试中的延时,ns
21
25
左右 -19% 更低的延时
更快的读取速度,GB/s
21.4
16.1
测试中的平均数值
更快的写入速度,GB/s
19.6
10.1
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-4600C18-8GTRS 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
25
21
读取速度,GB/s
16.1
21.4
写入速度,GB/s
10.1
19.6
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2764
4293
Samsung 1600 CL10 Series 8GB RAM的比较
G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-4600C18-8GTRS 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 99U5584-004.A00LF 4GB
Super Talent F24EA8GS 8GB
PNY Electronics PNY 2GB
Kingston ACR24D4S7D8MB-16 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMD32GX4M4A2666C15 8GB
A-DATA Technology DDR3 1866 2OZ 4GB
A-DATA Technology AD4U240038G17-BHYA 8GB
Kingston 9965525-140.A00LF 8GB
Corsair CMK16GX4M2K4266C16 8GB
Kingston 9905403-003.B00LF 4GB
Corsair CMD64GX4M8A2400C14 8GB
Essencore Limited KD48GU88C-26N1600 8GB
UMAX Technology D4-2133-4GB-512X8-L 4GB
Samsung M3 78T3354BZ0-CCC 256MB
Micron Technology 4ATF1G64HZ-3G2B2 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMD128GX4M8B2800C14 16GB
Kingston 9965525-155.A00LF 8GB
G Skill Intl F4-3200C16-8GTZKY 8GB
PNY Electronics PNY 2GB
Dust Leopard DDR4-2400 C17 8GB 8GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Apacer Technology 78.C2GFA.AF30B 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 99U5594-003.A00LF 2GB
Micron Technology 18HTF12872AY-800F1 1GB
Kingston 99U5704-001.A00G 4GB
报告一个错误
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Bug description
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