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Samsung 1600 CL10 Series 8GB
Gold Key Technology Co Ltd NMUD416E82-4000F 16GB

Samsung 1600 CL10 Series 8GB vs Gold Key Technology Co Ltd NMUD416E82-4000F 16GB

总分
star star star star star
Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分
star star star star star
Gold Key Technology Co Ltd NMUD416E82-4000F 16GB

Gold Key Technology Co Ltd NMUD416E82-4000F 16GB

差异 规格 评论

差异

Samsung 1600 CL10 Series 8GB 需要考虑的原因
Samsung 1600 CL10 Series 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 32
    左右 22% 更低的延时
Gold Key Technology Co Ltd NMUD416E82-4000F 16GB 需要考虑的原因
Gold Key Technology Co Ltd NMUD416E82-4000F 16GB
报告一个错误
  • 更快的读取速度，GB/s
    22.6 left arrow 16.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.4 left arrow 10.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung 1600 CL10 Series 8GB
Gold Key Technology Co Ltd NMUD416E82-4000F 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 32
  • 读取速度，GB/s
    16.1 left arrow 22.6
  • 写入速度，GB/s
    10.1 left arrow 16.4
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 3
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2764 left arrow 3837

Samsung 1600 CL10 Series 8GB RAM的比较

G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB

Gold Key Technology Co Ltd NMUD416E82-4000F 16GB RAM的比较

STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Gold Key Technology Co Ltd NMUD416E82-4000F 16GB
Gold Key Technology Co Ltd NMUD416E82-4000F 16GB
内存RAM
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Essencore Limited IM48GU88N26-GIIHA0 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Kingston HP37D4U1S8ME-8X 8GB
Kingston HP37D4U1S8ME-8X 8GB
内存RAM
Qimonda 64T128020EDL2.5C2 1GB
Qimonda 64T128020EDL2.5C2 1GB
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Micron Technology 8ATF51264AZ-2G1AY 4GB
内存RAM
Ramos Technology RMB4GB58BCA3-13HC 4GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
Mushkin MR[ABC]4U320GJJM32G 32GB
Mushkin MR[ABC]4U320GJJM32G 32GB
内存RAM
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Kingston 9905471-002.A00LF 2GB
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DSL Memory D4SS12082SH21A-A 8GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
Corsair CMW16GX4M2C3200C16 8GB
Corsair CMW16GX4M2C3200C16 8GB
内存RAM
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
Mushkin 99[2/7/4]192F 4GB
Mushkin 99[2/7/4]192F 4GB
内存RAM
G Skill Intl F5-5600J4040C16G 16GB
G Skill Intl F5-5600J4040C16G 16GB
G Skill Intl F4-2933C16-8GTZRX 8GB
G Skill Intl F4-2933C16-8GTZRX 8GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Apacer Technology 78.B1GN3.AZ32B 4GB
Apacer Technology 78.B1GN3.AZ32B 4GB
内存RAM
SK Hynix HYMP125U64CP8-S6 2GB
SK Hynix HYMP125U64CP8-S6 2GB
G Skill Intl F4-3600C19-16GSXW 16GB
G Skill Intl F4-3600C19-16GSXW 16GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Corsair CMK4GX4M1A2400C16 4GB
Corsair CMK4GX4M1A2400C16 4GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Crucial Technology CT4G4DFS824A.M8FB 4GB
Crucial Technology CT4G4DFS824A.M8FB 4GB
内存RAM
Micron Technology 8JSF25664HZ-1G4D1 2GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Corsair CM4X8GF2666C18S2 8GB
Corsair CM4X8GF2666C18S2 8GB
内存RAM