Samsung 1600 CL10 Series 8GB vs Golden Empire CL15-17-17 D4-2666 8GB

总分

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分

Golden Empire CL15-17-17 D4-2666 8GB

Golden Empire CL15-17-17 D4-2666 8GB

差异规格评论

差异

Samsung 1600 CL10 Series 8GB

需要考虑的原因
Samsung 1600 CL10 Series 8GB

报告一个错误

Golden Empire CL15-17-17 D4-2666 8GB

需要考虑的原因
Golden Empire CL15-17-17 D4-2666 8GB

报告一个错误

低于PassMark测试中的延时，ns

21 25

左右 -19% 更低的延时
更快的读取速度，GB/s

18.1 16.1

测试中的平均数值
更快的写入速度，GB/s

14.8 10.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung 1600 CL10 Series 8GB

Golden Empire CL15-17-17 D4-2666 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 21
读取速度，GB/s

16.1 18.1
写入速度，GB/s

10.1 14.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2764 3087

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M4 70T2953EZ3-CE6 1GB

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AMD R744G2606U1S 4GB

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Corsair CMY8GX3M2A2666C10 4GB

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Super Talent F24SB8GH 8GB

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Patriot Memory (PDP Systems) PSD44G240081S 4GB

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Kingston 9905702-029.A00G 8GB

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Corsair CMW64GX4M4K3600C18 16GB