Samsung 1600 CL10 Series 8GB vs Kingston KHX3733C19D4/16GX 16GB

总分

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分

Kingston KHX3733C19D4/16GX 16GB

Kingston KHX3733C19D4/16GX 16GB

差异规格评论

差异

Samsung 1600 CL10 Series 8GB

需要考虑的原因
Samsung 1600 CL10 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 28

左右 11% 更低的延时

Kingston KHX3733C19D4/16GX 16GB

需要考虑的原因
Kingston KHX3733C19D4/16GX 16GB

报告一个错误

更快的读取速度，GB/s

18.4 16.1

测试中的平均数值
更快的写入速度，GB/s

16.7 10.1

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung 1600 CL10 Series 8GB

Kingston KHX3733C19D4/16GX 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 28
读取速度，GB/s

16.1 18.4
写入速度，GB/s

10.1 16.7
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2764 3837

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Absolute Latency

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Super Talent F21UB8GS 8GB

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Kingston 9965525-140.A00LF 8GB

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SK Hynix HYMP164U64CP6-Y5 512MB

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Kingston MSI24D4U7D8MD-16 16GB

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Samsung M378A1K43EB2-CWE 8GB

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Corsair CM3X8GA2400C11Y2R 8GB

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Kingston 9965643-002.A01G 4GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

G Skill Intl F4-3000C15-8GTZB 8GB

G Skill Intl F4-3000C15-8GTZB 8GB

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

SK Hynix HMA81GS6CJR8N-XN 8GB

SK Hynix HMA81GS6CJR8N-XN 8GB

SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

AMD R744G2133U1S 4GB

AMD R744G2133U1S 4GB