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Samsung 1600 CL10 Series 8GB
Micron Technology 16ATF2G64AZ-2G3E1 16GB

Samsung 1600 CL10 Series 8GB vs Micron Technology 16ATF2G64AZ-2G3E1 16GB

总分
star star star star star
Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分
star star star star star
Micron Technology 16ATF2G64AZ-2G3E1 16GB

Micron Technology 16ATF2G64AZ-2G3E1 16GB

差异 规格 评论

差异

Samsung 1600 CL10 Series 8GB 需要考虑的原因
Samsung 1600 CL10 Series 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 42
    左右 40% 更低的延时
  • 更快的读取速度，GB/s
    16.1 left arrow 13.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.1 left arrow 9.0
    测试中的平均数值
Micron Technology 16ATF2G64AZ-2G3E1 16GB 需要考虑的原因
Micron Technology 16ATF2G64AZ-2G3E1 16GB
报告一个错误
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Samsung 1600 CL10 Series 8GB
Micron Technology 16ATF2G64AZ-2G3E1 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 42
  • 读取速度，GB/s
    16.1 left arrow 13.3
  • 写入速度，GB/s
    10.1 left arrow 9.0
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2764 left arrow 2427

Samsung 1600 CL10 Series 8GB RAM的比较

G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB

Micron Technology 16ATF2G64AZ-2G3E1 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology DQVE1908 512MB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Micron Technology 16ATF2G64AZ-2G3E1 16GB
Micron Technology 16ATF2G64AZ-2G3E1 16GB
内存RAM
Crucial Technology BLT4G3D1337DT1TX0. 4GB
Crucial Technology BLT4G3D1337DT1TX0. 4GB
Ramaxel Technology RMSA3260MD78HAF-2666 8GB
Ramaxel Technology RMSA3260MD78HAF-2666 8GB
内存RAM
A-DATA Technology DDR3 1333G 2GB
A-DATA Technology DDR3 1333G 2GB
Corsair CMV16GX4M1A2666C18 16GB
Corsair CMV16GX4M1A2666C18 16GB
内存RAM
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
Samsung M471A1A43DB0-CPB 8GB
Samsung M471A1A43DB0-CPB 8GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Corsair CMWX16GC3200C16W2E 16GB
Corsair CMWX16GC3200C16W2E 16GB
内存RAM
Crucial Technology BLT4G3D1337DT1TX0. 4GB
Crucial Technology BLT4G3D1337DT1TX0. 4GB
Apacer Technology GD2.22428S.001 8GB
Apacer Technology GD2.22428S.001 8GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Samsung M471A1K1KBB1-CRC 8GB
Samsung M471A1K1KBB1-CRC 8GB
内存RAM
Kingston 99U5584-017.A00LF 4GB
Kingston 99U5584-017.A00LF 4GB
G Skill Intl F4-2400C16-4GFX 4GB
G Skill Intl F4-2400C16-4GFX 4GB
内存RAM
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology CT102464BF160B-16F 8GB
G Skill Intl F4-3600C17-8GTZSW 8GB
G Skill Intl F4-3600C17-8GTZSW 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Corsair CMK16GX4M2D3200C16 8GB
Corsair CMK16GX4M2D3200C16 8GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Kingston 9965640-035.C00G 32GB
Kingston 9965640-035.C00G 32GB
内存RAM
Micron Technology 16JTF25664AZ-1G4F1 2GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Kingston 9905599-020.A00G 8GB
Kingston 9905599-020.A00G 8GB
内存RAM
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMD8GX3M2A2933C12 4GB
Chun Well Technology Holding Limited CL16-20-20 D4-3000 32GB
Chun Well Technology Holding Limited CL16-20-20 D4-3000
内存RAM
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Crucial Technology CT16G4SFRA32A.C16FP 16GB
Crucial Technology CT16G4SFRA32A.C16FP 16GB
内存RAM