RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Samsung 1600 CL10 Series 8GB
Patriot Memory (PDP Systems) 4000 C16 Series 8GB

Samsung 1600 CL10 Series 8GB vs Patriot Memory (PDP Systems) 4000 C16 Series 8GB

总分
star star star star star
Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分
star star star star star
Patriot Memory (PDP Systems) 4000 C16 Series 8GB

Patriot Memory (PDP Systems) 4000 C16 Series 8GB

差异 规格 评论

差异

Samsung 1600 CL10 Series 8GB 需要考虑的原因
Samsung 1600 CL10 Series 8GB
报告一个错误
Patriot Memory (PDP Systems) 4000 C16 Series 8GB 需要考虑的原因
Patriot Memory (PDP Systems) 4000 C16 Series 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    19 left arrow 25
    左右 -32% 更低的延时
  • 更快的读取速度，GB/s
    21.9 left arrow 16.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    22.2 left arrow 10.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung 1600 CL10 Series 8GB
Patriot Memory (PDP Systems) 4000 C16 Series 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 19
  • 读取速度，GB/s
    16.1 left arrow 21.9
  • 写入速度，GB/s
    10.1 left arrow 22.2
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2764 left arrow 4574

Samsung 1600 CL10 Series 8GB RAM的比较

G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB

Patriot Memory (PDP Systems) 4000 C16 Series 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SpecTek Incorporated ?????????????????? 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Patriot Memory (PDP Systems) 4000 C16 Series 8GB
Patriot Memory (PDP Systems) 4000 C16 Series 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Micron Technology 8ATF1G64HZ-2G3B1 8GB
Micron Technology 8ATF1G64HZ-2G3B1 8GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
InnoDisk Corporation 16GB
InnoDisk Corporation 16GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Crucial Technology BLM16G40C18U4BL.M8FB 16GB
Crucial Technology BLM16G40C18U4BL.M8FB 16GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
G Skill Intl F4-2133C15-8GRR2 8GB
G Skill Intl F4-2133C15-8GRR2 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
SK Hynix HMA851U6CJR6N-VK 4GB
SK Hynix HMA851U6CJR6N-VK 4GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Micron Technology 18ASF2G72AZ-2G6D1 16GB
Micron Technology 18ASF2G72AZ-2G6D1 16GB
内存RAM
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
G Skill Intl F4-2133C15-8GVK 8GB
G Skill Intl F4-2133C15-8GVK 8GB
内存RAM
Kingston K531R8-MIN 4GB
Kingston K531R8-MIN 4GB
Golden Empire CL16-16-16 D4-3200 4GB
Golden Empire CL16-16-16 D4-3200 4GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Kingston KF2666C13D4/8GX 8GB
Kingston KF2666C13D4/8GX 8GB
内存RAM
Samsung M393A1G40DB0-CPB 8GB
Samsung M393A1G40DB0-CPB 8GB
G Skill Intl F4-3200C16-8GRS 8GB
G Skill Intl F4-3200C16-8GRS 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Thermaltake Technology Co Ltd R022R432GX2-3600C18A 32GB
Thermaltake Technology Co Ltd R022R432GX2-3600C18A 32GB
内存RAM
Kingston KHX318C10FR/8G 8GB
Kingston KHX318C10FR/8G 8GB
Corsair CMK16GX4M2Z4000C18 8GB
Corsair CMK16GX4M2Z4000C18 8GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-4133C17-8GTZR 8GB
G Skill Intl F4-4133C17-8GTZR 8GB
内存RAM