Samsung 1600 CL10 Series 8GB vs SK Hynix HMA82GR7AFR8N-VK 16GB

总分

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分

SK Hynix HMA82GR7AFR8N-VK 16GB

SK Hynix HMA82GR7AFR8N-VK 16GB

差异规格评论

差异

Samsung 1600 CL10 Series 8GB

需要考虑的原因
Samsung 1600 CL10 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 40

左右 38% 更低的延时
更快的读取速度，GB/s

16.1 9.1

测试中的平均数值
更快的写入速度，GB/s

10.1 6.3

测试中的平均数值

SK Hynix HMA82GR7AFR8N-VK 16GB

需要考虑的原因
SK Hynix HMA82GR7AFR8N-VK 16GB

报告一个错误

更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung 1600 CL10 Series 8GB

SK Hynix HMA82GR7AFR8N-VK 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 40
读取速度，GB/s

16.1 9.1
写入速度，GB/s

10.1 6.3
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2764 1764

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-3200C16-16GTZA 16GB

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Samsung M378T5663QZ3-CF7 2GB

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SK Hynix HMA84GR7MFR4N-UH 32GB

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Samsung 1600 CL10 Series 8GB

SK Hynix HMA82GR7AFR8N-VK 16GB

SK Hynix HMA82GR7AFR8N-VK 16GB

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Crucial Technology CT16G4DFD8266.C16FP 16GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

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Corsair CMR32GX4M4C3200C16 8GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Apacer Technology 78.D2GF2.4010B 16GB

Apacer Technology 78.D2GF2.4010B 16GB

SpecTek Incorporated ?????????????????? 2GB

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Corsair CMK64GX4M8X4133C19 8GB

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Kingston KHX1600C9D3/8G 8GB

Corsair CMK32GX4M4B3200C14 8GB

Corsair CMK32GX4M4B3200C14 8GB