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Samsung 1600 CL10 Series 8GB
SK Hynix HMA82GS6DJR8N-WM 16GB

Samsung 1600 CL10 Series 8GB vs SK Hynix HMA82GS6DJR8N-WM 16GB

总分
star star star star star
Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分
star star star star star
SK Hynix HMA82GS6DJR8N-WM 16GB

SK Hynix HMA82GS6DJR8N-WM 16GB

差异 规格 评论

差异

Samsung 1600 CL10 Series 8GB 需要考虑的原因
Samsung 1600 CL10 Series 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 43
    左右 42% 更低的延时
  • 更快的读取速度，GB/s
    16.1 left arrow 15
    测试中的平均数值
SK Hynix HMA82GS6DJR8N-WM 16GB 需要考虑的原因
SK Hynix HMA82GS6DJR8N-WM 16GB
报告一个错误
  • 更快的写入速度，GB/s
    13.0 left arrow 10.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    23400 left arrow 12800
    左右 1.83 更高的带宽

规格

完整的技术规格清单
Samsung 1600 CL10 Series 8GB
SK Hynix HMA82GS6DJR8N-WM 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 43
  • 读取速度，GB/s
    16.1 left arrow 15.0
  • 写入速度，GB/s
    10.1 left arrow 13.0
  • 内存带宽，mbps
    12800 left arrow 23400
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
  • 排名PassMark (越多越好)
    2764 left arrow 2794

Samsung 1600 CL10 Series 8GB RAM的比较

G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB

SK Hynix HMA82GS6DJR8N-WM 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
SK Hynix HMA82GS6DJR8N-WM 16GB
SK Hynix HMA82GS6DJR8N-WM 16GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
Samsung M386A2G40DB0-CPB 16GB
Samsung M386A2G40DB0-CPB 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Ramaxel Technology RMSA3260MH78HAF-2666 8GB
Ramaxel Technology RMSA3260MH78HAF-2666 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT8G4DFS8213.M8FA 8GB
Crucial Technology CT8G4DFS8213.M8FA 8GB
内存RAM
Patriot Memory (PDP Systems) PSD34G13332 4GB
Patriot Memory (PDP Systems) PSD34G13332 4GB
Kingston 99U5402-462.A00LF 4GB
Kingston 99U5402-462.A00LF 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMK16GX4M4A2400C16 4GB
Corsair CMK16GX4M4A2400C16 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMK32GX4M1A2400C16 32GB
Corsair CMK32GX4M1A2400C16 32GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-2800C15-8GVRB 8GB
G Skill Intl F4-2800C15-8GVRB 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Crucial Technology BL32G32C16S4B.M16FB1 32GB
Crucial Technology BL32G32C16S4B.M16FB1 32GB
内存RAM
Kingston KVR800D2N6/2G 2GB
Kingston KVR800D2N6/2G 2GB
Samsung M386A4G40DM0-CPB 32GB
Samsung M386A4G40DM0-CPB 32GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Micron Technology 18ASF1G72PZ-2G1AV 8GB
Micron Technology 18ASF1G72PZ-2G1AV 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Micron Technology 8G2666CL19 8GB
Micron Technology 8G2666CL19 8GB
内存RAM
Kingston 9905402-665.A00LF 4GB
Kingston 9905402-665.A00LF 4GB
Micron Technology 4ATF51264HZ-2G3B2 4GB
Micron Technology 4ATF51264HZ-2G3B2 4GB
内存RAM
Kingston 9905402-665.A00LF 4GB
Kingston 9905402-665.A00LF 4GB
Crucial Technology BL8G30C15U4R.M8FE 8GB
Crucial Technology BL8G30C15U4R.M8FE 8GB
内存RAM