Samsung 1600 CL10 Series 8GB vs SK Hynix HMA84GL7AMR4N-TF 32GB

总分

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分

SK Hynix HMA84GL7AMR4N-TF 32GB

SK Hynix HMA84GL7AMR4N-TF 32GB

差异规格评论

差异

Samsung 1600 CL10 Series 8GB

需要考虑的原因
Samsung 1600 CL10 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 38

左右 34% 更低的延时
更快的读取速度，GB/s

16.1 8.6

测试中的平均数值
更快的写入速度，GB/s

10.1 7.7

测试中的平均数值

SK Hynix HMA84GL7AMR4N-TF 32GB

需要考虑的原因
SK Hynix HMA84GL7AMR4N-TF 32GB

报告一个错误

更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung 1600 CL10 Series 8GB

SK Hynix HMA84GL7AMR4N-TF 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 38
读取速度，GB/s

16.1 8.6
写入速度，GB/s

10.1 7.7
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2764 2094

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3333C16-4GRKD 4GB

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Samsung M393B5170FH0-CK0 4GB

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Samsung 1600 CL10 Series 8GB

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Corsair CMU32GX4M4C3000C16 8GB

Corsair CMU32GX4M4C3000C16 8GB

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Samsung M393B5170FH0-CK0 4GB

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Kingston 9905678-024.A00G 4GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

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Kingston CBD24D4S7S8MB-8 8GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

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Kingston XK2M26-MIE-NX 16GB

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Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

G Skill Intl F4-4400C16-8GTZR 8GB

G Skill Intl F4-4400C16-8GTZR 8GB

Kingston KP223C-ELD 2GB

Kingston KP223C-ELD 2GB

Kllisre 0000 8GB

Kllisre 0000 8GB