PNY Electronics PNY 2GB vs Corsair CMD128GX4M8B3200C16 16GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

Corsair CMD128GX4M8B3200C16 16GB

Corsair CMD128GX4M8B3200C16 16GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 31

左右 13% 更低的延时
更快的读取速度，GB/s

13.8 12.2

测试中的平均数值

Corsair CMD128GX4M8B3200C16 16GB

需要考虑的原因
Corsair CMD128GX4M8B3200C16 16GB

报告一个错误

更快的写入速度，GB/s

12.1 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

Corsair CMD128GX4M8B3200C16 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 31
读取速度，GB/s

13.8 12.2
写入速度，GB/s

8.4 12.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2274 2869

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Ramaxel Technology RMSA3320MJ78HAF-3200 8GB

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Samsung M471A5244CB0-CWE 4GB

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G Skill Intl F4-2800C15-4GTZ 4GB

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Corsair CMY8GX3M2A2666C10 4GB

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Crucial Technology CT16G4DFD8213.C16FH1 16GB

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Kingston 9905403-061.A00LF 2GB

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G Skill Intl F4-4000C17-8GVKB 8GB

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Crucial Technology BL16G30C15U4B.M16FE1 16GB

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Kingston 9905403-437.A01LF 4GB

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Kingston 9965589-024.D01G 16GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

Samsung V-GeN D4S16GL32A8TS 16GB

Samsung V-GeN D4S16GL32A8TS 16GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Samsung M474A1G43DB0-CPB 8GB

Samsung M474A1G43DB0-CPB 8GB

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

Kingston 9965589-035.D00G 16GB

Kingston 9965589-035.D00G 16GB

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

Crucial Technology CT8G4SFRA32A.M8FRS 8GB

Crucial Technology CT8G4SFRA32A.M8FRS 8GB