Samsung 1600 CL10 Series 8GB vs SK Hynix HMAA4GU6AJR8N-XN 32GB

总分

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分

SK Hynix HMAA4GU6AJR8N-XN 32GB

SK Hynix HMAA4GU6AJR8N-XN 32GB

差异规格评论

差异

Samsung 1600 CL10 Series 8GB

需要考虑的原因
Samsung 1600 CL10 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 36

左右 31% 更低的延时

SK Hynix HMAA4GU6AJR8N-XN 32GB

需要考虑的原因
SK Hynix HMAA4GU6AJR8N-XN 32GB

报告一个错误

更快的读取速度，GB/s

16.5 16.1

测试中的平均数值
更快的写入速度，GB/s

14.1 10.1

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung 1600 CL10 Series 8GB

SK Hynix HMAA4GU6AJR8N-XN 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 36
读取速度，GB/s

16.1 16.5
写入速度，GB/s

10.1 14.1
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2764 3414

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMV4GX4M1A2666C18 4GB

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Corsair CM4X16GD3200C16K4E 16GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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Corsair CMD128GX4M8B3200C16 16GB

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SpecTek Incorporated ?????????????????? 2GB

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Kingston 99U5469-045.A00LF 4GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Kingston KH280C14D4/8X 8GB

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Kingston 99U5700-014.A00G 8GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

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Wilk Elektronik S.A. GR3200S464L22/16G 16GB

Kingston 99U5428-063.A00LF 8GB

Kingston 99U5428-063.A00LF 8GB

Corsair CMD16GX4M4B3000C15 4GB

Corsair CMD16GX4M4B3000C15 4GB

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

AMD R748G2400U2S-UO 8GB

AMD R748G2400U2S-UO 8GB

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

Kingston HX424C15FB/8 8GB

Kingston HX424C15FB/8 8GB