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Samsung 16KTF1G64AZ-1G9P1 8GB
EXCELERAM D4168G8HHSS9CJRB21 16GB

Samsung 16KTF1G64AZ-1G9P1 8GB vs EXCELERAM D4168G8HHSS9CJRB21 16GB

总分
star star star star star
Samsung 16KTF1G64AZ-1G9P1 8GB

Samsung 16KTF1G64AZ-1G9P1 8GB

总分
star star star star star
EXCELERAM D4168G8HHSS9CJRB21 16GB

EXCELERAM D4168G8HHSS9CJRB21 16GB

差异 规格 评论

差异

Samsung 16KTF1G64AZ-1G9P1 8GB 需要考虑的原因
Samsung 16KTF1G64AZ-1G9P1 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    65 left arrow 89
    左右 27% 更低的延时
EXCELERAM D4168G8HHSS9CJRB21 16GB 需要考虑的原因
EXCELERAM D4168G8HHSS9CJRB21 16GB
报告一个错误
  • 更快的读取速度，GB/s
    14.2 left arrow 6.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    7.1 left arrow 5.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 14900
    左右 1.43 更高的带宽

规格

完整的技术规格清单
Samsung 16KTF1G64AZ-1G9P1 8GB
EXCELERAM D4168G8HHSS9CJRB21 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    65 left arrow 89
  • 读取速度，GB/s
    6.8 left arrow 14.2
  • 写入速度，GB/s
    5.4 left arrow 7.1
  • 内存带宽，mbps
    14900 left arrow 21300
Other
  • 描述
    PC3-14900, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 13 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    9-10-9-28 / 1866 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1370 left arrow 1571

Samsung 16KTF1G64AZ-1G9P1 8GB RAM的比较

Samsung M323R2GA3BB0-CQKOD 16GB
Samsung M471A1K1KBB0-CPB 8GB

EXCELERAM D4168G8HHSS9CJRB21 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Corsair CMT64GX4M8Z3600C16 8GB
Corsair CMT64GX4M8Z3600C16 8GB
内存RAM
Samsung 16KTF1G64AZ-1G9P1 8GB
Samsung 16KTF1G64AZ-1G9P1 8GB
EXCELERAM D4168G8HHSS9CJRB21 16GB
EXCELERAM D4168G8HHSS9CJRB21 16GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Corsair CMU32GX4M2D3200C16 16GB
Corsair CMU32GX4M2D3200C16 16GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Crucial Technology CT8G4SFD8213.C16FADP 8GB
Crucial Technology CT8G4SFD8213.C16FADP 8GB
内存RAM
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
G Skill Intl F4-3600C18-8GTRG 8GB
G Skill Intl F4-3600C18-8GTRG 8GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
G Skill Intl F4-2666C19-32GNT 32GB
G Skill Intl F4-2666C19-32GNT 32GB
内存RAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
Crucial Technology CT16G4DFD8266.C16FE 16GB
Crucial Technology CT16G4DFD8266.C16FE 16GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Corsair CMH16GX4M2D3600C18 8GB
Corsair CMH16GX4M2D3600C18 8GB
内存RAM
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMT16GX4M2K4000C19 8GB
Corsair CMT16GX4M2K4000C19 8GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Kingston 9905598-009.A00G 8GB
Kingston 9905598-009.A00G 8GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
SK Hynix HMA82GR7MFR8N-UH 16GB
SK Hynix HMA82GR7MFR8N-UH 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston X5H5PW-MIB 8GB
Kingston X5H5PW-MIB 8GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Panram International Corporation PUD43000C158G2NJK 8GB
Panram International Corporation PUD43000C158G2NJK 8GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Crucial Technology BLS16G4S240FSD.16FBD 16GB
Crucial Technology BLS16G4S240FSD.16FBD 16GB
内存RAM