Samsung 16KTF1G64AZ-1G9P1 8GB vs G Skill Intl F4-4000C19-16GTZSW 16GB

总分

Samsung 16KTF1G64AZ-1G9P1 8GB

Samsung 16KTF1G64AZ-1G9P1 8GB

总分

G Skill Intl F4-4000C19-16GTZSW 16GB

G Skill Intl F4-4000C19-16GTZSW 16GB

差异规格评论

差异

Samsung 16KTF1G64AZ-1G9P1 8GB

需要考虑的原因
Samsung 16KTF1G64AZ-1G9P1 8GB

报告一个错误

G Skill Intl F4-4000C19-16GTZSW 16GB

需要考虑的原因
G Skill Intl F4-4000C19-16GTZSW 16GB

报告一个错误

低于PassMark测试中的延时，ns

22 65

左右 -195% 更低的延时
更快的读取速度，GB/s

16.9 6.8

测试中的平均数值
更快的写入速度，GB/s

13.6 5.4

测试中的平均数值
更高的内存带宽，mbps

17000 14900

左右 1.14 更高的带宽

规格

完整的技术规格清单

Samsung 16KTF1G64AZ-1G9P1 8GB

G Skill Intl F4-4000C19-16GTZSW 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

65 22
读取速度，GB/s

6.8 16.9
写入速度，GB/s

5.4 13.6
内存带宽，mbps

14900 17000

Other

描述

PC3-14900, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 13 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-10-9-28 / 1866 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1370 3192

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMSX16GX4M1A2666C18 16GB

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Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

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Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

G Skill Intl F4-3000C16-8GISB 8GB

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OCZ OCZ2SI8002G 2GB

OCZ OCZ2SI8002G 2GB

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G Skill Intl F4-4400C17-16GVK 16GB

Kingston 99U5428-063.A00LF 8GB

Kingston 99U5428-063.A00LF 8GB

Samsung M378A2K43CB1-CTD 16GB

Samsung M378A2K43CB1-CTD 16GB