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Samsung 16KTF1G64AZ-1G9P1 8GB
Kingston 9905624-045.A00G 8GB

Samsung 16KTF1G64AZ-1G9P1 8GB vs Kingston 9905624-045.A00G 8GB

总分
star star star star star
Samsung 16KTF1G64AZ-1G9P1 8GB

Samsung 16KTF1G64AZ-1G9P1 8GB

总分
star star star star star
Kingston 9905624-045.A00G 8GB

Kingston 9905624-045.A00G 8GB

差异 规格 评论

差异

Samsung 16KTF1G64AZ-1G9P1 8GB 需要考虑的原因
Samsung 16KTF1G64AZ-1G9P1 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    65 left arrow 93
    左右 30% 更低的延时
Kingston 9905624-045.A00G 8GB 需要考虑的原因
Kingston 9905624-045.A00G 8GB
报告一个错误
  • 更快的读取速度，GB/s
    15.5 left arrow 6.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.3 left arrow 5.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 14900
    左右 1.43 更高的带宽

规格

完整的技术规格清单
Samsung 16KTF1G64AZ-1G9P1 8GB
Kingston 9905624-045.A00G 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    65 left arrow 93
  • 读取速度，GB/s
    6.8 left arrow 15.5
  • 写入速度，GB/s
    5.4 left arrow 8.3
  • 内存带宽，mbps
    14900 left arrow 21300
Other
  • 描述
    PC3-14900, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 13 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-10-9-28 / 1866 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1370 left arrow 1670

Samsung 16KTF1G64AZ-1G9P1 8GB RAM的比较

Samsung M323R2GA3BB0-CQKOD 16GB
Samsung M471A1K1KBB0-CPB 8GB

Kingston 9905624-045.A00G 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology CT2K102464BD160B 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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内存RAM
Samsung M323R2GA3BB0-CQKOD 16GB
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内存RAM
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Crucial Technology CT51264AC800.C16FC 4GB
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内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
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内存RAM
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内存RAM
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内存RAM
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Nanya Technology M2N1G64TUH8D5F-AC 1GB
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SK Hynix HMA42GR7AFR4N-UH 16GB
内存RAM