Samsung M323R2GA3BB0-CQKOD 16GB vs SK Hynix HMAA1GS6CJR6N-XN 8GB

总分

Samsung M323R2GA3BB0-CQKOD 16GB

Samsung M323R2GA3BB0-CQKOD 16GB

总分

SK Hynix HMAA1GS6CJR6N-XN 8GB

SK Hynix HMAA1GS6CJR6N-XN 8GB

差异规格评论

差异

Samsung M323R2GA3BB0-CQKOD 16GB

需要考虑的原因
Samsung M323R2GA3BB0-CQKOD 16GB

报告一个错误

低于PassMark测试中的延时，ns

25 54

左右 54% 更低的延时
更快的写入速度，GB/s

12.1 11.6

测试中的平均数值

SK Hynix HMAA1GS6CJR6N-XN 8GB

需要考虑的原因
SK Hynix HMAA1GS6CJR6N-XN 8GB

报告一个错误

更快的读取速度，GB/s

15.7 13.4

测试中的平均数值
更高的内存带宽，mbps

25600 19200

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M323R2GA3BB0-CQKOD 16GB

SK Hynix HMAA1GS6CJR6N-XN 8GB

主要特点

存储器类型

DDR5 DDR4
PassMark中的延时，ns

25 54
读取速度，GB/s

13.4 15.7
写入速度，GB/s

12.1 11.6
内存带宽，mbps

19200 25600

Other

描述

PC5-19200, 1.1V, CAS Supported: 22 26 28 30 32 36 40 42 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

no data / 2400 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

3419 2511

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMK32GX5M2B5200C40 16GB

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SK Hynix HYMP112U64CP8-S5 1GB

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SK Hynix HMA851S6DJR6N-XN 4GB

SK Hynix HMA851S6DJR6N-XN 4GB

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Corsair CML8GX3M2A1600C9 4GB

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Patriot Memory (PDP Systems) 4133 C19 Series 8GB

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G Skill Intl F3-1600C11-4GIS 4GB

G Skill Intl F3-1600C11-4GIS 4GB

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Corsair CMT16GX4M2C3466C16 8GB

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Apacer Technology 78.CAGPN.DF40B 8GB

Apacer Technology 78.CAGPN.DF40B 8GB