Samsung DDR3 8GB 1600MHz 8GB vs Apacer Technology 78.C1GM3.C7Z0C 8GB

总分

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

总分

Apacer Technology 78.C1GM3.C7Z0C 8GB

Apacer Technology 78.C1GM3.C7Z0C 8GB

差异规格评论

差异

Samsung DDR3 8GB 1600MHz 8GB

需要考虑的原因
Samsung DDR3 8GB 1600MHz 8GB

报告一个错误

更快的读取速度，GB/s

14.9 14.7

测试中的平均数值

Apacer Technology 78.C1GM3.C7Z0C 8GB

需要考虑的原因
Apacer Technology 78.C1GM3.C7Z0C 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 43

左右 -65% 更低的延时
更快的写入速度，GB/s

9.7 9.6

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung DDR3 8GB 1600MHz 8GB

Apacer Technology 78.C1GM3.C7Z0C 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 26
读取速度，GB/s

14.9 14.7
写入速度，GB/s

9.6 9.7
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2506 2455

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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SK Hynix HMA851U6CJR6N-UH 4GB

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Teikon TMA851U6AFR6N-UHHC 4GB

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Kingston 9905403-156.A00LF 2GB

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Corsair CMD8GX4M2B4000C19 4GB

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Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology CT4G4DFS824A.C8FBD2 4GB

Crucial Technology CT4G4DFS824A.C8FBD2 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Thermaltake Technology Co Ltd RA24D408GX2-3600C18A 8GB

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Kingston 9905665-023.A00G 4GB

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Samsung M393B1K70CH0-YH9 8GB

INTENSO M418039 8GB

INTENSO M418039 8GB