Samsung DDR3 8GB 1600MHz 8GB vs Crucial Technology BLS16G4D240FSB.16FBR 16GB

总分

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

总分

Crucial Technology BLS16G4D240FSB.16FBR 16GB

Crucial Technology BLS16G4D240FSB.16FBR 16GB

差异规格评论

差异

Samsung DDR3 8GB 1600MHz 8GB

需要考虑的原因
Samsung DDR3 8GB 1600MHz 8GB

报告一个错误

Crucial Technology BLS16G4D240FSB.16FBR 16GB

需要考虑的原因
Crucial Technology BLS16G4D240FSB.16FBR 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 43

左右 -39% 更低的延时
更快的读取速度，GB/s

17 14.9

测试中的平均数值
更快的写入速度，GB/s

12.5 9.6

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung DDR3 8GB 1600MHz 8GB

Crucial Technology BLS16G4D240FSB.16FBR 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 31
读取速度，GB/s

14.9 17.0
写入速度，GB/s

9.6 12.5
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2506 3120

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Crucial Technology BLS16G4D240FSB.16FBR 16GB

Crucial Technology BLS16G4D240FSB.16FBR 16GB

SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

Corsair CMD32GX4M4B3333C16 8GB

Corsair CMD32GX4M4B3333C16 8GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Micron Technology 36ASF4G72LZ-2G3A1 32GB

Micron Technology 36ASF4G72LZ-2G3A1 32GB

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

Crucial Technology CT16G4SFD824A.C16FN 16GB

Crucial Technology CT16G4SFD824A.C16FN 16GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Crucial Technology CT16G4DFD824A.C16FHD 16GB

Crucial Technology CT16G4DFD824A.C16FHD 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston LV32D4S2S8HD-8 8GB

Kingston LV32D4S2S8HD-8 8GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Kingston HX424C15FB/8 8GB

Kingston HX424C15FB/8 8GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Micron Technology 8ATF1G64HZ-2G3A1 8GB

Micron Technology 8ATF1G64HZ-2G3A1 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

G Skill Intl F4-3600C18-32GTRG 32GB

G Skill Intl F4-3600C18-32GTRG 32GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Crucial Technology BLS8G4D240FSCK.8FBD 8GB

Crucial Technology BLS8G4D240FSCK.8FBD 8GB

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

Corsair CMK32GX4M4A2133C15 8GB

Corsair CMK32GX4M4A2133C15 8GB

Kingston 9905702-010.A00G 8GB

Kingston 9905702-010.A00G 8GB

ADVAN Inc AM42E28UD04T-NVL 4GB

ADVAN Inc AM42E28UD04T-NVL 4GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

Kingston 99U5701-003.A00G 16GB

Kingston 99U5701-003.A00G 16GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Samsung M471A1K43BB0-CPB 8GB

Samsung M471A1K43BB0-CPB 8GB