Samsung DDR3 8GB 1600MHz 8GB vs Crucial Technology BLT8G4D30AET4K.M8FE1 8GB

总分

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

总分

Crucial Technology BLT8G4D30AET4K.M8FE1 8GB

Crucial Technology BLT8G4D30AET4K.M8FE1 8GB

差异规格评论

差异

Samsung DDR3 8GB 1600MHz 8GB

需要考虑的原因
Samsung DDR3 8GB 1600MHz 8GB

报告一个错误

Crucial Technology BLT8G4D30AET4K.M8FE1 8GB

需要考虑的原因
Crucial Technology BLT8G4D30AET4K.M8FE1 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 43

左右 -59% 更低的延时
更快的读取速度，GB/s

18.2 14.9

测试中的平均数值
更快的写入速度，GB/s

14.9 9.6

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung DDR3 8GB 1600MHz 8GB

Crucial Technology BLT8G4D30AET4K.M8FE1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 27
读取速度，GB/s

14.9 18.2
写入速度，GB/s

9.6 14.9
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2506 3510

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

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最新比较

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Samsung M3 93T5750CZA-CE6 2GB

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Mushkin 991586 2GB

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Kingston KVR16N11/8-SP 8GB

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SK Hynix HMA851U6DJR6N-XN 4GB

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Kingston XVTW4H-MIE 32GB

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Smart Modular SF564128CJ8N6NNSEG 4GB

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Kingston KHX3000C15D4/4GX 4GB

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

AMD R748G2400U2S 8GB

AMD R748G2400U2S 8GB

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Nanya Technology M2N1G64TUH8D5F-AC 1GB

Transcend Information TS2GLH64V4B 16GB

Transcend Information TS2GLH64V4B 16GB