Samsung DDR3 8GB 1600MHz 8GB vs G Skill Intl F4-4266C19-8GTZA 8GB

总分

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

总分

G Skill Intl F4-4266C19-8GTZA 8GB

G Skill Intl F4-4266C19-8GTZA 8GB

差异规格评论

差异

Samsung DDR3 8GB 1600MHz 8GB

需要考虑的原因
Samsung DDR3 8GB 1600MHz 8GB

报告一个错误

G Skill Intl F4-4266C19-8GTZA 8GB

需要考虑的原因
G Skill Intl F4-4266C19-8GTZA 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 43

左右 -54% 更低的延时
更快的读取速度，GB/s

18 14.9

测试中的平均数值
更快的写入速度，GB/s

15.2 9.6

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung DDR3 8GB 1600MHz 8GB

G Skill Intl F4-4266C19-8GTZA 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 28
读取速度，GB/s

14.9 18.0
写入速度，GB/s

9.6 15.2
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2506 3660

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F5-5600J4040C16G 16GB

Corsair CMD32GX4M2C3200C14T 16GB

Corsair CMD32GX4M2C3200C14T 16GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Apacer Technology 78.CAGQE.C750B 8GB

Apacer Technology 78.CAGQE.C750B 8GB

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

Teikon TMA81GS6AFR8N-UHSC 8GB

Teikon TMA81GS6AFR8N-UHSC 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Smart Modular SMS4WEC8C2K0446FCG 16GB

Smart Modular SMS4WEC8C2K0446FCG 16GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Kingston 99U5624-003.A00G 8GB

Kingston 99U5624-003.A00G 8GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

G Skill Intl F4-4400C19-16GTZR 16GB

G Skill Intl F4-4400C19-16GTZR 16GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Crucial Technology CT16G4SFS8266.C8FB 16GB

Crucial Technology CT16G4SFS8266.C8FB 16GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Patriot Memory (PDP Systems) PSD44G266681 4GB

Patriot Memory (PDP Systems) PSD44G266681 4GB

Elpida EBJ81UG8BBU0-GN-F 8GB

Elpida EBJ81UG8BBU0-GN-F 8GB

Maxsun MSD48G26Q3 8GB

Maxsun MSD48G26Q3 8GB

Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

G Skill Intl F4-3333C16-8GTZSW 8GB

G Skill Intl F4-3333C16-8GTZSW 8GB

Kingston 9905584-016.A00LF 4GB

Kingston 9905584-016.A00LF 4GB

Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB

Chun Well Technology Holding Limited CL17-17-17 D4-2400

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Crucial Technology CT8G4SFS824A.M8FH 8GB

Crucial Technology CT8G4SFS824A.M8FH 8GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Crucial Technology CT16G4SFD8266.M16FJ 16GB

Crucial Technology CT16G4SFD8266.M16FJ 16GB