Samsung DDR3 8GB 1600MHz 8GB vs SK Hynix GKE160SO102408-3000 16GB

总分

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

总分

SK Hynix GKE160SO102408-3000 16GB

SK Hynix GKE160SO102408-3000 16GB

差异规格评论

差异

Samsung DDR3 8GB 1600MHz 8GB

需要考虑的原因
Samsung DDR3 8GB 1600MHz 8GB

报告一个错误

SK Hynix GKE160SO102408-3000 16GB

需要考虑的原因
SK Hynix GKE160SO102408-3000 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 43

左右 -54% 更低的延时
更快的读取速度，GB/s

18.6 14.9

测试中的平均数值
更快的写入速度，GB/s

15.1 9.6

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung DDR3 8GB 1600MHz 8GB

SK Hynix GKE160SO102408-3000 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 28
读取速度，GB/s

14.9 18.6
写入速度，GB/s

9.6 15.1
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2506 3552

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

G Skill Intl F4-2666C15-8GRKB 8GB

G Skill Intl F4-2666C15-8GRKB 8GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

SK Hynix GKE160SO102408-3000 16GB

SK Hynix GKE160SO102408-3000 16GB

Ramaxel Technology RMSA3260NA78HAF-2666 8GB

Ramaxel Technology RMSA3260NA78HAF-2666 8GB

Micron Technology 8ATF1G64HZ-2G3H1 8GB

Micron Technology 8ATF1G64HZ-2G3H1 8GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

Corsair CMW16GX4M2D3600C16 8GB

Corsair CMW16GX4M2D3600C16 8GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Corsair CMK16GX4M2B3000C15 8GB

Corsair CMK16GX4M2B3000C15 8GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F4-2400C17-8GFT 8GB

G Skill Intl F4-2400C17-8GFT 8GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Essencore Limited KD48GU880-32A160T 8GB

Essencore Limited KD48GU880-32A160T 8GB

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

Kingston KHX2933C17S4/32G 32GB

Kingston KHX2933C17S4/32G 32GB

G Skill Intl F2-5300CL4-1GBSA 1GB

G Skill Intl F2-5300CL4-1GBSA 1GB

Micron Technology 16ATF2G64HZ-2G6E1 16GB

Micron Technology 16ATF2G64HZ-2G6E1 16GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Gold Key Technology Co Ltd NMSO480E82-3200E 8GB

Gold Key Technology Co Ltd NMSO480E82-3200E 8GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Crucial Technology BL8G32C16U4RL.M8FE1 8GB

Crucial Technology BL8G32C16U4RL.M8FE1 8GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

G Skill Intl F4-2133C15-8GNS 8GB

G Skill Intl F4-2133C15-8GNS 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Kingston KHX2666C13D4/8GX 8GB

Kingston KHX2666C13D4/8GX 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Samsung M378A5143EB1-CPB 4GB

Samsung M378A5143EB1-CPB 4GB