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Samsung M3 78T2863EHS-CF7 1GB
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB

Samsung M3 78T2863EHS-CF7 1GB vs Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB

总分
star star star star star
Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分
star star star star star
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB

Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB

差异 规格 评论

差异

Samsung M3 78T2863EHS-CF7 1GB 需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 15.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,123.3 left arrow 11.6
    测试中的平均数值
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB 需要考虑的原因
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 59
    左右 -127% 更低的延时
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T2863EHS-CF7 1GB
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    59 left arrow 26
  • 读取速度，GB/s
    4,833.8 left arrow 15.6
  • 写入速度，GB/s
    2,123.3 left arrow 11.6
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    731 left arrow 2808

Samsung M3 78T2863EHS-CF7 1GB RAM的比较

Samsung M3 78T2863QZS-CE6 1GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB

Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

G Skill Intl F3-17000CL9-4GBXLD 4GB
G Skill Intl F3-17000CL9-4GBXLD 4GB
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Crucial Technology CT8G4SFS824A.C8FBR1 8GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
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Corsair CMSX64GX4M4A2400C16 16GB
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Samsung M471B1G73QH0-YK0 8GB
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Crucial Technology BL32G36C16U4BL.M16FB 32GB
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Samsung M393B5270CH0-CH9 4GB
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Corsair CMD16GX4M4C3200C15 4GB
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Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
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Micron Technology 8ATF1G64HZ-2G2G1 8GB
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TwinMOS 8DPT5MK8-TATP 2GB
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Corsair CMSX32GX4M2A2933C19 16GB
内存RAM
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Samsung M378B5773DH0-CH9 2GB
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Gloway International (HK) STK4U2400D17041C 4GB
内存RAM
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A-DATA Technology DQKD1A08 1GB
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G Skill Intl F4-3600C16-8GTZRC 8GB
内存RAM
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Kingston 99U5474-022.A00LF 2GB
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Corsair CMK32GX4M2D3200C16 16GB
内存RAM
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Good Wealth Technology Ltd. KETECH 8GB
内存RAM
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PNY Electronics PNY 2GB
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Corsair CMSX8GX4M2A2666C18 4GB
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