RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T2863EHS-CF7 1GB
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
Compare
Samsung M3 78T2863EHS-CF7 1GB vs Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
Overall score
Samsung M3 78T2863EHS-CF7 1GB
Overall score
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T2863EHS-CF7 1GB
Report a bug
Faster reading speed, GB/s
4
15.6
Average value in the tests
Faster write speed, GB/s
2,123.3
11.6
Average value in the tests
Reasons to consider
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
Report a bug
Below the latency in the PassMark tests, ns
26
59
Around -127% lower latency
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T2863EHS-CF7 1GB
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
59
26
Read speed, GB/s
4,833.8
15.6
Write speed, GB/s
2,123.3
11.6
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 18
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
731
2808
Samsung M3 78T2863EHS-CF7 1GB RAM comparisons
Samsung M3 78T2863QZS-CE6 1GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston ACR256X64D3S1333C9 2GB
ATP Electronics Inc. A4G08QA8BNPBSE 8GB
Samsung M3 78T2863EHS-CF7 1GB
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
Corsair CMSO4GX3M1C1600C11 4GB
Patriot Memory (PDP Systems) 3000 C18 Series 16GB
G Skill Intl F3-2133C9-4GAB 4GB
Gold Key Technology Co Ltd GKE160SO102408-3200 16GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Kingston KDK8NX-MIE 16GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Heoriady M471A1K43BB1-CRC 16GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Crucial Technology CT8G4SFD824A.C16FHP 8GB
Samsung M386B4G70DM0-CMA4 32GB
Patriot Memory (PDP Systems) PSD48G240082 8GB
Smart Modular SH564128FH8N0QHSCG 4GB
G Skill Intl F4-3200C16-8GVR 8GB
A-DATA Technology DDR2 800G 2GB
Kingmax Semiconductor GLMH23F-18MCIA------ 16GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Corsair CMK8GX4M1D3000C16 8GB
Corsair CML8GX3M2A1866C9 4GB
Kingmax Semiconductor GLLH22F-18---------- 16GB
Samsung M378B5673EH1-CF8 2GB
G Skill Intl F4-3200C16-8GSXFB 8GB
Samsung M378A1K43EB2-CWE 8GB
SK Hynix MMA82GS6CJR8N-VK 16GB
Report a bug
×
Bug description
Source link