Samsung M3 78T2863EHS-CF7 1GB vs G Skill Intl F4-2133C15-16GFT 16GB

总分

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分

G Skill Intl F4-2133C15-16GFT 16GB

G Skill Intl F4-2133C15-16GFT 16GB

差异规格评论

差异

Samsung M3 78T2863EHS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 11

测试中的平均数值
更快的写入速度，GB/s

2,123.3 11.5

测试中的平均数值

G Skill Intl F4-2133C15-16GFT 16GB

需要考虑的原因
G Skill Intl F4-2133C15-16GFT 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 59

左右 -84% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863EHS-CF7 1GB

G Skill Intl F4-2133C15-16GFT 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 32
读取速度，GB/s

4,833.8 11.0
写入速度，GB/s

2,123.3 11.5
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

731 2622

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

G Skill Intl F4-3600C16-8GTZRC 8GB

G Skill Intl F4-3600C16-8GTZRC 8GB

Team Group Inc. Team-Elite-1333 4GB

Team Group Inc. Team-Elite-1333 4GB

InnoDisk Corporation M4SI-BGS2OC0K-A 32GB

InnoDisk Corporation M4SI-BGS2OC0K-A 32GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Crucial Technology CT16G4DFD8266.M16FD 16GB

Crucial Technology CT16G4DFD8266.M16FD 16GB

Crucial Technology CT25664AA800.M16FG 2GB

Crucial Technology CT25664AA800.M16FG 2GB

Crucial Technology CT8G4SFRA32A.M8FR 8GB

Crucial Technology CT8G4SFRA32A.M8FR 8GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Hypertec G2RT-4AFT00 16GB

Hypertec G2RT-4AFT00 16GB

SK Hynix HMT325S6CFR8C-H9 2GB

SK Hynix HMT325S6CFR8C-H9 2GB

Micron Technology 8ATF1G64AZ-2G6E1 8GB

Micron Technology 8ATF1G64AZ-2G6E1 8GB

Elpida EBJ10UE8BAFA-AE-E 1GB

Elpida EBJ10UE8BAFA-AE-E 1GB

Crucial Technology CT16G4SFD8266.M16FJ 16GB

Crucial Technology CT16G4SFD8266.M16FJ 16GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

SK Hynix HMA81GS6CJR8N-VK 8GB

SK Hynix HMA81GS6CJR8N-VK 8GB

Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

A-DATA Technology AE4S240038G17-BHYA 8GB

A-DATA Technology AE4S240038G17-BHYA 8GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

G Skill Intl F4-3600C19-8GTZRB 8GB

G Skill Intl F4-3600C19-8GTZRB 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

G Skill Intl F4-3600C19-8GSXF 8GB

G Skill Intl F4-3600C19-8GSXF 8GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

SpecTek Incorporated 16G2666CL19 16GB

SpecTek Incorporated 16G2666CL19 16GB

Crucial Technology CT102464BF160B.C16 8GB

Crucial Technology CT102464BF160B.C16 8GB

Samsung M378A2G43AB3-CWE 16GB

Samsung M378A2G43AB3-CWE 16GB