RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Samsung M3 78T2863EHS-CF7 1GB
Kingston KHX2666C16S4/32G 32GB

Samsung M3 78T2863EHS-CF7 1GB vs Kingston KHX2666C16S4/32G 32GB

总分
star star star star star
Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分
star star star star star
Kingston KHX2666C16S4/32G 32GB

Kingston KHX2666C16S4/32G 32GB

差异 规格 评论

差异

Samsung M3 78T2863EHS-CF7 1GB 需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 16.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,123.3 left arrow 13.6
    测试中的平均数值
Kingston KHX2666C16S4/32G 32GB 需要考虑的原因
Kingston KHX2666C16S4/32G 32GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 59
    左右 -97% 更低的延时
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T2863EHS-CF7 1GB
Kingston KHX2666C16S4/32G 32GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    59 left arrow 30
  • 读取速度，GB/s
    4,833.8 left arrow 16.3
  • 写入速度，GB/s
    2,123.3 left arrow 13.6
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    731 left arrow 3323

Samsung M3 78T2863EHS-CF7 1GB RAM的比较

Samsung M3 78T2863QZS-CE6 1GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB

Kingston KHX2666C16S4/32G 32GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMT32GX4M4K3600C16 8GB
Corsair CMT32GX4M4K3600C16 8GB
内存RAM
SK Hynix HYMP112U64CP8-Y5 1GB
SK Hynix HYMP112U64CP8-Y5 1GB
Kingston HP28D4S7D8HA-16X 16GB
Kingston HP28D4S7D8HA-16X 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 18ASF1G72AZ-2G1A1 8GB
Micron Technology 18ASF1G72AZ-2G1A1 8GB
内存RAM
Kingston 9905316-106.A02LF 1GB
Kingston 9905316-106.A02LF 1GB
G Skill Intl F4-2666C18-8GFT 8GB
G Skill Intl F4-2666C18-8GFT 8GB
内存RAM
Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
Corsair CMK16GX4M4C3200C16 4GB
Corsair CMK16GX4M4C3200C16 4GB
内存RAM
Kingston 99U5429-014.A00LF 4GB
Kingston 99U5429-014.A00LF 4GB
G Skill Intl F4-2133C15-8GNS 8GB
G Skill Intl F4-2133C15-8GNS 8GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
Samsung M378A2K43CB1-CTD 16GB
Samsung M378A2K43CB1-CTD 16GB
内存RAM
SK Hynix HMT425S6AFR6A-PB 2GB
SK Hynix HMT425S6AFR6A-PB 2GB
Kingston KTP9W1-MID 16GB
Kingston KTP9W1-MID 16GB
内存RAM
AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
Kingston 9905622-075.A00G 8GB
Kingston 9905622-075.A00G 8GB
内存RAM
Kingston ACR16D3LFS1KBG/2G 2GB
Kingston ACR16D3LFS1KBG/2G 2GB
Crucial Technology CT102464BF1339.C16 8GB
Crucial Technology CT102464BF1339.C16 8GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Apacer Technology 78.BAGP4.AR50C 4GB
Apacer Technology 78.BAGP4.AR50C 4GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Kingmax Semiconductor GLNG43F-18---------- 8GB
Kingmax Semiconductor GLNG43F-18---------- 8GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Micron Technology AFLD48VH1P 8GB
Micron Technology AFLD48VH1P 8GB
内存RAM
PUSKILL PJ8TFK1GM8 8GB
PUSKILL PJ8TFK1GM8 8GB
Samsung M471A5244CB0-CTD 4GB
Samsung M471A5244CB0-CTD 4GB
内存RAM