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Samsung M3 78T2953EZ3-CF7 1GB
Kingston 9905624-014.A00G 4GB

Samsung M3 78T2953EZ3-CF7 1GB vs Kingston 9905624-014.A00G 4GB

总分
star star star star star
Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

总分
star star star star star
Kingston 9905624-014.A00G 4GB

Kingston 9905624-014.A00G 4GB

差异 规格 评论

差异

Samsung M3 78T2953EZ3-CF7 1GB 需要考虑的原因
Samsung M3 78T2953EZ3-CF7 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 16.2
    测试中的平均数值
Kingston 9905624-014.A00G 4GB 需要考虑的原因
Kingston 9905624-014.A00G 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 58
    左右 -152% 更低的延时
  • 更快的写入速度，GB/s
    13.3 left arrow 1,950.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T2953EZ3-CF7 1GB
Kingston 9905624-014.A00G 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    58 left arrow 23
  • 读取速度，GB/s
    4,241.0 left arrow 16.2
  • 写入速度，GB/s
    1,950.7 left arrow 13.3
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    651 left arrow 2598

Samsung M3 78T2953EZ3-CF7 1GB RAM的比较

Corsair VS1GB800D2 1GB
Kingston KVR800D2N6/2G 2GB

Kingston 9905624-014.A00G 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology AQD-D4U8GN24-SE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Kingston ACR16D3LS1KNG/4G 4GB
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AMD R5S38G1601U2S 8GB
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A-DATA Technology AM2L16BC4R1-B0CS 4GB
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AMD AE34G2139U2 4GB
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内存RAM
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
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内存RAM
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Kingston 9965525-155.A00LF 8GB
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内存RAM
Kingston 99U5471-033.A00LF 4GB
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G Skill Intl F4-4266C17-8GTZRB 8GB
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内存RAM
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Micron Technology AFSD416ES1P 16GB
内存RAM
A-DATA Technology DDR3L 1333G 4GB
A-DATA Technology DDR3L 1333G 4GB
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G Skill Intl F4-3600C16-16GTZRC 16GB
内存RAM