Samsung M3 78T2863EHS-CF7 1GB vs Micron Technology 16ATF2G64HZ-2G1A1 16GB

总分

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分

Micron Technology 16ATF2G64HZ-2G1A1 16GB

Micron Technology 16ATF2G64HZ-2G1A1 16GB

差异规格评论

差异

Samsung M3 78T2863EHS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 13.7

测试中的平均数值
更快的写入速度，GB/s

2,123.3 10.6

测试中的平均数值

Micron Technology 16ATF2G64HZ-2G1A1 16GB

需要考虑的原因
Micron Technology 16ATF2G64HZ-2G1A1 16GB

报告一个错误

低于PassMark测试中的延时，ns

36 59

左右 -64% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863EHS-CF7 1GB

Micron Technology 16ATF2G64HZ-2G1A1 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 36
读取速度，GB/s

4,833.8 13.7
写入速度，GB/s

2,123.3 10.6
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

731 2504

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KHX1600C9D3/4G 4GB

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Corsair CMU64GX4M4D3000C16 16GB

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Samsung M3 78T2863EHS-CF7 1GB

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Micron Technology 16ATF2G64HZ-2G1A1 16GB

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Ramaxel Technology RMSA3320MJ78HAF-3200 8GB

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Corsair CMSX8GX4M1A2666C18 8GB

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SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

SK Hynix HMA81GU6DJR8N-VK 8GB

SK Hynix HMA81GU6DJR8N-VK 8GB

Apacer Technology 78.01GA0.9K5 1GB

Apacer Technology 78.01GA0.9K5 1GB

Crucial Technology BLS4G4D26BFSC.8FBD2 4GB

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Micron Technology 16KTF1G64HZ-1G9E2 8GB

Micron Technology 16KTF1G64HZ-1G9E2 8GB

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