Samsung M3 78T2863EHS-CF7 1GB vs Micron Technology 16ATF4G64HZ-3G2E1 32GB

总分

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分

Micron Technology 16ATF4G64HZ-3G2E1 32GB

Micron Technology 16ATF4G64HZ-3G2E1 32GB

差异规格评论

差异

Samsung M3 78T2863EHS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 16.4

测试中的平均数值
更快的写入速度，GB/s

2,123.3 13.7

测试中的平均数值

Micron Technology 16ATF4G64HZ-3G2E1 32GB

需要考虑的原因
Micron Technology 16ATF4G64HZ-3G2E1 32GB

报告一个错误

低于PassMark测试中的延时，ns

38 59

左右 -55% 更低的延时
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863EHS-CF7 1GB

Micron Technology 16ATF4G64HZ-3G2E1 32GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 38
读取速度，GB/s

4,833.8 16.4
写入速度，GB/s

2,123.3 13.7
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

731 3206

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M3 78T2863EHS-CF7 1GB

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Micron Technology 16ATF4G64HZ-3G2E1 32GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

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Ramaxel Technology RMT3020EC58E9F1333 4GB

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G Skill Intl F4-3600C16-8GTZKW 8GB

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SK Hynix HMT425S6CFR6A-PB 2GB

Crucial Technology CT8G4SFS832A.C8FP 8GB

Crucial Technology CT8G4SFS832A.C8FP 8GB

Strontium EVMT8G1600U86S 8GB

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Kingston 9905403-061.A00LF 2GB

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Samsung M393B1G70QH0-YK0 8GB

Samsung M393B1G70QH0-YK0 8GB

Samsung M378A2K43BB1-CPB 16GB

Samsung M378A2K43BB1-CPB 16GB