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Samsung M3 78T2863EHS-CF7 1GB
Teikon TMA81GS6AFR8N-UHSC 8GB

Samsung M3 78T2863EHS-CF7 1GB vs Teikon TMA81GS6AFR8N-UHSC 8GB

总分
star star star star star
Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分
star star star star star
Teikon TMA81GS6AFR8N-UHSC 8GB

Teikon TMA81GS6AFR8N-UHSC 8GB

差异 规格 评论

差异

Samsung M3 78T2863EHS-CF7 1GB 需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 13.5
    测试中的平均数值
Teikon TMA81GS6AFR8N-UHSC 8GB 需要考虑的原因
Teikon TMA81GS6AFR8N-UHSC 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    37 left arrow 59
    左右 -59% 更低的延时
  • 更快的写入速度，GB/s
    8.5 left arrow 2,123.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T2863EHS-CF7 1GB
Teikon TMA81GS6AFR8N-UHSC 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    59 left arrow 37
  • 读取速度，GB/s
    4,833.8 left arrow 13.5
  • 写入速度，GB/s
    2,123.3 left arrow 8.5
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    731 left arrow 2026

Samsung M3 78T2863EHS-CF7 1GB RAM的比较

Samsung M3 78T2863QZS-CE6 1GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB

Teikon TMA81GS6AFR8N-UHSC 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Teikon TMA81GS6AFR8N-UHSC 8GB
Teikon TMA81GS6AFR8N-UHSC 8GB
内存RAM
Kingston HX318C10FK/4 4GB
Kingston HX318C10FK/4 4GB
Samsung M378A5143EB1-CPB 4GB
Samsung M378A5143EB1-CPB 4GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Transcend Information TS512MSH64V4H 4GB
Transcend Information TS512MSH64V4H 4GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingston 9905678-156.A00G 8GB
Kingston 9905678-156.A00G 8GB
内存RAM
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
Netac Technology Co Ltd E40832A 8GB
Netac Technology Co Ltd E40832A 8GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB
Chun Well Technology Holding Limited CL16-18-18 D4-3000
内存RAM
Samsung M471B5273DH0-CK0 4GB
Samsung M471B5273DH0-CK0 4GB
G Skill Intl F4-4000C19-16GTRG 16GB
G Skill Intl F4-4000C19-16GTRG 16GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Corsair CMD64GX4M8A2666C15 8GB
Corsair CMD64GX4M8A2666C15 8GB
内存RAM
G Skill Intl F4-4400C19-32GVK 32GB
G Skill Intl F4-4400C19-32GVK 32GB
Corsair CMK32GX4M2D3600C16 16GB
Corsair CMK32GX4M2D3600C16 16GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Kingmax Semiconductor GSAF62F-D8---------- 4GB
Kingmax Semiconductor GSAF62F-D8---------- 4GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Asgard VMA45UG-MEC1U2AW2 8GB
Asgard VMA45UG-MEC1U2AW2 8GB
内存RAM
Samsung M393A1G40DB0-CPB 8GB
Samsung M393A1G40DB0-CPB 8GB
Smart Modular SF4641G8CK8I6GKSEG 8GB
Smart Modular SF4641G8CK8I6GKSEG 8GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Kingston KF3000C15D4/8GX 8GB
Kingston KF3000C15D4/8GX 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-2400C16-4GRS 4GB
G Skill Intl F4-2400C16-4GRS 4GB
内存RAM