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Nanya Technology M2F8G64CB8HC9N-DI 8GB
Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB vs Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB

总分
star star star star star
Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

总分
star star star star star
Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB

Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB

差异 规格 评论

差异

Nanya Technology M2F8G64CB8HC9N-DI 8GB 需要考虑的原因
Nanya Technology M2F8G64CB8HC9N-DI 8GB
报告一个错误
Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB 需要考虑的原因
Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 37
    左右 -23% 更低的延时
  • 更快的读取速度，GB/s
    16.9 left arrow 13.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.4 left arrow 8.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    37 left arrow 30
  • 读取速度，GB/s
    13.9 left arrow 16.9
  • 写入速度，GB/s
    8.6 left arrow 13.4
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2395 left arrow 3257

Nanya Technology M2F8G64CB8HC9N-DI 8GB RAM的比较

SK Hynix HMT41GR7AFR4C-PB 8GB
Kingston 99P5474-050.A00LF 4GB

Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB RAM的比较

Kingston 9905403-444.A00LF 4GB
Kingston 9905403-090.A01LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
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Kingston KHX3600C18D4/32GX 32GB
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Corsair CML8GX3M2A1600C9 4GB
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Corsair CMN32GX4M2Z3200C16 16GB
Corsair CMN32GX4M2Z3200C16 16GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
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内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F3-2133C10-4GAB 4GB
G Skill Intl F3-2133C10-4GAB 4GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
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Patriot Memory (PDP Systems) 2800 C18 Series 16GB
Patriot Memory (PDP Systems) 2800 C18 Series 16GB
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Team Group Inc. Team-Elite-1333 4GB
Team Group Inc. Team-Elite-1333 4GB
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Crucial Technology BLS4G4D26BFSB.8FE 4GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Kingston K9CXF2-MIE 8GB
Kingston K9CXF2-MIE 8GB
内存RAM
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SK Hynix HMT31GR7BFR4C-H9 8GB
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Corsair CMD16GX4M2K4133C19 8GB
内存RAM
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Kingston ACR16D3LS1NGG/2G 2GB
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Essencore Limited IM48GU48N24-FFFHM 8GB
内存RAM
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Kingston KHX1600C9D3/8G 8GB
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Kingston 9965596-029.B00G 4GB
内存RAM
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G Skill Intl F4-4400C18-8GTZRC 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
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Corsair CMSX64GX4M2A2933C19 32GB
内存RAM
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Corsair CMK8GX4M2B4266C19 4GB
内存RAM
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TwinMOS 8DPT5MK8-TATP 2GB
Transcend Information TS1GLH64V4H 8GB
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