Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

G Skill Intl F3-2133C10-4GAB 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F3-2133C10-4GAB 4GB

总分

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分

G Skill Intl F3-2133C10-4GAB 4GB

G Skill Intl F3-2133C10-4GAB 4GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

报告一个错误

更快的读取速度，GB/s

16 14.8

测试中的平均数值
更快的写入速度，GB/s

12.5 10.1

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5% 更高的带宽

G Skill Intl F3-2133C10-4GAB 4GB

需要考虑的原因
G Skill Intl F3-2133C10-4GAB 4GB

报告一个错误

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

G Skill Intl F3-2133C10-4GAB 4GB

主要特点

存储器类型

DDR4 DDR3
PassMark中的延时，ns

24 24
读取速度，GB/s

16.0 14.8
写入速度，GB/s

12.5 10.1
内存带宽，mbps

19200 12800

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

2925 2588

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F3-2133C10-4GAB 4GB

G Skill Intl F3-2133C10-4GAB 4GB

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

Kingston 99U5702-095.A00G 8GB

Kingston 99U5702-095.A00G 8GB

Kingston HX316C10F/8 8GB

Kingston HX316C10F/8 8GB

A-DATA Technology AO1P24HC8T1-BSFS 8GB

A-DATA Technology AO1P24HC8T1-BSFS 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

InnoDisk Corporation M4C0-AGS1TCSJ 16GB

InnoDisk Corporation M4C0-AGS1TCSJ 16GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

G Skill Intl F4-2666C15-8GRKB 8GB

G Skill Intl F4-2666C15-8GRKB 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Samsung M471A1K1KBB0-CPB 8GB

Samsung M471A1K1KBB0-CPB 8GB

SK Hynix HYMP512S64CP8-Y5 1GB

SK Hynix HYMP512S64CP8-Y5 1GB

Crucial Technology CT8G4DFS632A.M4FE 8GB

Crucial Technology CT8G4DFS632A.M4FE 8GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Crucial Technology BLE4G4D30AEEA.K8FE 4GB

Crucial Technology BLE4G4D30AEEA.K8FE 4GB

Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Teikon TMA81GS6CJR8N-VKSC 8GB

Teikon TMA81GS6CJR8N-VKSC 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Mushkin MR[A/B]4U320LLLM16G 16GB

Mushkin MR[A/B]4U320LLLM16G 16GB

Kingston 9965525-155.A00LF 8GB

Kingston 9965525-155.A00LF 8GB

Corsair CMK32GX4M4A2666C16 8GB

Corsair CMK32GX4M4A2666C16 8GB

Elpida EBJ41UF8BDU5-GN-F 4GB

Elpida EBJ41UF8BDU5-GN-F 4GB

V-Color Technology Inc. TN48G26S819-SB 8GB

V-Color Technology Inc. TN48G26S819-SB 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

SanMax Technologies Inc. SMD4-U8G48MB-24RX 8GB

SanMax Technologies Inc. SMD4-U8G48MB-24RX 8GB