Smart Modular SG564568FG8N6KF-Z2 2GB vs G Skill Intl F4-4400C18-8GTZRC 8GB

总分

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

总分

G Skill Intl F4-4400C18-8GTZRC 8GB

G Skill Intl F4-4400C18-8GTZRC 8GB

差异规格评论

差异

Smart Modular SG564568FG8N6KF-Z2 2GB

需要考虑的原因
Smart Modular SG564568FG8N6KF-Z2 2GB

报告一个错误

更快的读取速度，GB/s

4 22.3

测试中的平均数值
更快的写入速度，GB/s

3,071.4 16.3

测试中的平均数值

G Skill Intl F4-4400C18-8GTZRC 8GB

需要考虑的原因
G Skill Intl F4-4400C18-8GTZRC 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 70

左右 -133% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Smart Modular SG564568FG8N6KF-Z2 2GB

G Skill Intl F4-4400C18-8GTZRC 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

70 30
读取速度，GB/s

4,372.7 22.3
写入速度，GB/s

3,071.4 16.3
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

668 3697

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378A1K43EB2-CWE 8GB

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Crucial Technology CT4G4DFS8266.M8FE 4GB

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Nanya Technology M2Y1G64TU8HB0B-25C 1GB

Micron Technology 9ASF51272PZ-2G3B1 4GB

Micron Technology 9ASF51272PZ-2G3B1 4GB