Samsung M3 78T2863QZS-CF7 1GB vs G Skill Intl F4-2133C15-4GFX 4GB

总分

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

总分

G Skill Intl F4-2133C15-4GFX 4GB

G Skill Intl F4-2133C15-4GFX 4GB

差异规格评论

差异

Samsung M3 78T2863QZS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863QZS-CF7 1GB

报告一个错误

低于PassMark测试中的延时，ns

69 80

左右 14% 更低的延时
更快的读取速度，GB/s

4 14.1

测试中的平均数值

G Skill Intl F4-2133C15-4GFX 4GB

需要考虑的原因
G Skill Intl F4-2133C15-4GFX 4GB

报告一个错误

更快的写入速度，GB/s

7.4 1,857.7

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863QZS-CF7 1GB

G Skill Intl F4-2133C15-4GFX 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 80
读取速度，GB/s

4,217.2 14.1
写入速度，GB/s

1,857.7 7.4
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

668 1564

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMR16GX4M2C3466C16 8GB

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AMD AE34G1601U1 4GB

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GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB

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Mushkin 991586 2GB

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Avant Technology F6451U64F9333G 4GB

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Crucial Technology BLS8G4D30AESEK.M8FE 8GB

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Kingston 9965662-016.A00G 16GB

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Essencore Limited IM4AGS88N26-GIIHA0 16GB

Essencore Limited IM4AGS88N26-GIIHA0 16GB

Crucial Technology CT25664AA800.M16FG 2GB

Crucial Technology CT25664AA800.M16FG 2GB

Micron Technology 18ASF1G72PDZ-2G6B1 8GB

Micron Technology 18ASF1G72PDZ-2G6B1 8GB

AMD R5316G1609U2K 8GB

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Crucial Technology CT51264BD160B.C16F 4GB

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