Samsung M3 78T2863QZS-CF7 1GB vs G Skill Intl F4-2933C14-8GTZRX 8GB

总分

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

总分

G Skill Intl F4-2933C14-8GTZRX 8GB

G Skill Intl F4-2933C14-8GTZRX 8GB

差异规格评论

差异

Samsung M3 78T2863QZS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863QZS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 17.5

测试中的平均数值

G Skill Intl F4-2933C14-8GTZRX 8GB

需要考虑的原因
G Skill Intl F4-2933C14-8GTZRX 8GB

报告一个错误

低于PassMark测试中的延时，ns

54 69

左右 -28% 更低的延时
更快的写入速度，GB/s

9.3 1,857.7

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863QZS-CF7 1GB

G Skill Intl F4-2933C14-8GTZRX 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 54
读取速度，GB/s

4,217.2 17.5
写入速度，GB/s

1,857.7 9.3
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

668 2264

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HYMP112U64CP8-S5 1GB

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Corsair CMV16GX4M1A2400C16 16GB

Corsair CMV16GX4M1A2400C16 16GB

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SK Hynix HMT325S6CFR8C-PB 2GB

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G Skill Intl F4-3200C16-8GTZKO 8GB

Kingston 99U5471-052.A00LF 8GB

Kingston 99U5471-052.A00LF 8GB

Crucial Technology BLS8G4D26BFSBK.8FBD 8GB

Crucial Technology BLS8G4D26BFSBK.8FBD 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

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Kingston XF875V-MIH 8GB

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Kingston HP698651-154-MCN 8GB

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Samsung M378A1K43EB2-CWE 8GB

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Peak Electronics 256X64M-67E 2GB

G Skill Intl F4-3600C14-8GTZNB 8GB

G Skill Intl F4-3600C14-8GTZNB 8GB