Samsung M3 78T2863QZS-CF7 1GB vs Hoodisk Electronics Co Ltd GKE800UD102408-2666 8GB

总分

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

总分

Hoodisk Electronics Co Ltd GKE800UD102408-2666 8GB

Hoodisk Electronics Co Ltd GKE800UD102408-2666 8GB

差异规格评论

差异

Samsung M3 78T2863QZS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863QZS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 18.4

测试中的平均数值

Hoodisk Electronics Co Ltd GKE800UD102408-2666 8GB

需要考虑的原因
Hoodisk Electronics Co Ltd GKE800UD102408-2666 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 69

左右 -188% 更低的延时
更快的写入速度，GB/s

14.3 1,857.7

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863QZS-CF7 1GB

Hoodisk Electronics Co Ltd GKE800UD102408-2666 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 24
读取速度，GB/s

4,217.2 18.4
写入速度，GB/s

1,857.7 14.3
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

668 3158

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Elpida EBJ40EG8BFWB-JS-F 4GB

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SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

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Crucial Technology CT4G4DFS8213.M8FA 4GB

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Kingston 9905458-017.A01LF 4GB

Kingston KHX3200C16D4/4GX 4GB

Kingston KHX3200C16D4/4GX 4GB