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Samsung M3 78T2953EZ3-CF7 1GB
Crucial Technology BLS4G4D26BFSC.8FBD2 4GB

Samsung M3 78T2953EZ3-CF7 1GB vs Crucial Technology BLS4G4D26BFSC.8FBD2 4GB

总分
star star star star star
Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

总分
star star star star star
Crucial Technology BLS4G4D26BFSC.8FBD2 4GB

Crucial Technology BLS4G4D26BFSC.8FBD2 4GB

差异 规格 评论

差异

Samsung M3 78T2953EZ3-CF7 1GB 需要考虑的原因
Samsung M3 78T2953EZ3-CF7 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 17.9
    测试中的平均数值
Crucial Technology BLS4G4D26BFSC.8FBD2 4GB 需要考虑的原因
Crucial Technology BLS4G4D26BFSC.8FBD2 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    21 left arrow 58
    左右 -176% 更低的延时
  • 更快的写入速度，GB/s
    13.7 left arrow 1,950.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T2953EZ3-CF7 1GB
Crucial Technology BLS4G4D26BFSC.8FBD2 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    58 left arrow 21
  • 读取速度，GB/s
    4,241.0 left arrow 17.9
  • 写入速度，GB/s
    1,950.7 left arrow 13.7
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    651 left arrow 2950

Samsung M3 78T2953EZ3-CF7 1GB RAM的比较

Corsair VS1GB800D2 1GB
Kingston KVR800D2N6/2G 2GB

Crucial Technology BLS4G4D26BFSC.8FBD2 4GB RAM的比较

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Corsair CMK32GX4M2Z3600C18 16GB
Corsair CMK32GX4M2Z3600C18 16GB
内存RAM
A-DATA Technology DDR4 2400 16GB
A-DATA Technology DDR4 2400 16GB
G Skill Intl F4-4000C15-8GVK 8GB
G Skill Intl F4-4000C15-8GVK 8GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Team Group Inc. TEAMGROUP-D4-3600 4GB
Team Group Inc. TEAMGROUP-D4-3600 4GB
内存RAM
Samsung M3 78T2953EZ3-CF7 1GB
Samsung M3 78T2953EZ3-CF7 1GB
Crucial Technology BLS4G4D26BFSC.8FBD2 4GB
Crucial Technology BLS4G4D26BFSC.8FBD2 4GB
内存RAM
Samsung M393B2G70BH0-YK0 16GB
Samsung M393B2G70BH0-YK0 16GB
SK Hynix HMA84GL7MMR4N-TF 32GB
SK Hynix HMA84GL7MMR4N-TF 32GB
内存RAM
G Skill Intl F3-12800CL7-4GBXM 4GB
G Skill Intl F3-12800CL7-4GBXM 4GB
Kingston 9965600-012.A02G 16GB
Kingston 9965600-012.A02G 16GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Corsair CMK16GX4M2A2400C16 8GB
Corsair CMK16GX4M2A2400C16 8GB
内存RAM
Kingston 9965433-034.A00LF 4GB
Kingston 9965433-034.A00LF 4GB
Samsung M393A2K43DB3-CWE 16GB
Samsung M393A2K43DB3-CWE 16GB
内存RAM
Corsair CMSX4GX3M1A1600C9 4GB
Corsair CMSX4GX3M1A1600C9 4GB
Micron Technology 36ASF2G72PZ-2G1B1 16GB
Micron Technology 36ASF2G72PZ-2G1B1 16GB
内存RAM
Corsair CMY16GX3M4A2133C8 4GB
Corsair CMY16GX3M4A2133C8 4GB
A-DATA Technology AO2P32NC8W1-BD3SHC 8GB
A-DATA Technology AO2P32NC8W1-BD3SHC 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
A-DATA Technology AD4U240038G17-BHYA 8GB
A-DATA Technology AD4U240038G17-BHYA 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3200C16-16GTZN 16GB
G Skill Intl F4-3200C16-16GTZN 16GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
G Skill Intl F4-3600C18-16GTZR 16GB
G Skill Intl F4-3600C18-16GTZR 16GB
内存RAM
Kingston 99U5429-007.A00LF 2GB
Kingston 99U5429-007.A00LF 2GB
Crucial Technology BL16G32C16U4RL.M8FB1 16GB
Crucial Technology BL16G32C16U4RL.M8FB1 16GB
内存RAM