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Samsung M3 78T2953EZ3-CF7 1GB
Essencore Limited KD48GU88C-26N190A 8GB

Samsung M3 78T2953EZ3-CF7 1GB vs Essencore Limited KD48GU88C-26N190A 8GB

总分
star star star star star
Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

总分
star star star star star
Essencore Limited KD48GU88C-26N190A 8GB

Essencore Limited KD48GU88C-26N190A 8GB

差异 规格 评论

差异

Samsung M3 78T2953EZ3-CF7 1GB 需要考虑的原因
Samsung M3 78T2953EZ3-CF7 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 13.5
    测试中的平均数值
Essencore Limited KD48GU88C-26N190A 8GB 需要考虑的原因
Essencore Limited KD48GU88C-26N190A 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    41 left arrow 58
    左右 -41% 更低的延时
  • 更快的写入速度，GB/s
    10.9 left arrow 1,950.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T2953EZ3-CF7 1GB
Essencore Limited KD48GU88C-26N190A 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    58 left arrow 41
  • 读取速度，GB/s
    4,241.0 left arrow 13.5
  • 写入速度，GB/s
    1,950.7 left arrow 10.9
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    651 left arrow 2797

Samsung M3 78T2953EZ3-CF7 1GB RAM的比较

Corsair VS1GB800D2 1GB
Kingston KVR800D2N6/2G 2GB

Essencore Limited KD48GU88C-26N190A 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Kingston 9905630-052.A00G 16GB
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Crucial Technology CT51264BF160B.M16F 4GB
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Crucial Technology CT16G4DFD8266.M16FJ 16GB
内存RAM
Samsung M3 78T2953EZ3-CF7 1GB
Samsung M3 78T2953EZ3-CF7 1GB
Essencore Limited KD48GU88C-26N190A 8GB
Essencore Limited KD48GU88C-26N190A 8GB
内存RAM
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
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Crucial Technology CB16GS2666.C8ET 16GB
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SK Hynix HMT31GR7BFR4C-H9 8GB
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Crucial Technology CT25664AA800.M16FG 2GB
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Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
A Force Manufacturing Ltd. UD-01G64V2133P 8GB
A Force Manufacturing Ltd. UD-01G64V2133P 8GB
内存RAM
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Crucial Technology CT51264BA1339.C16F 4GB
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内存RAM
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SK Hynix HMT451S6DFR8A-PB 4GB
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SK Hynix HMA451U7AFR8N-TF 4GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
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SK Hynix HMA84GL7AFR4N-UH 32GB
内存RAM
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内存RAM
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A-DATA Technology DQVE1908 512MB
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