Samsung M3 78T2953EZ3-CF7 1GB vs G Skill Intl F4-4000C18-8GTRS 8GB

总分

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

总分

G Skill Intl F4-4000C18-8GTRS 8GB

G Skill Intl F4-4000C18-8GTRS 8GB

差异规格评论

差异

Samsung M3 78T2953EZ3-CF7 1GB

需要考虑的原因
Samsung M3 78T2953EZ3-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 17.6

测试中的平均数值

G Skill Intl F4-4000C18-8GTRS 8GB

需要考虑的原因
G Skill Intl F4-4000C18-8GTRS 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 58

左右 -100% 更低的延时
更快的写入速度，GB/s

18.0 1,950.7

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2953EZ3-CF7 1GB

G Skill Intl F4-4000C18-8GTRS 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

58 29
读取速度，GB/s

4,241.0 17.6
写入速度，GB/s

1,950.7 18.0
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

651 3872

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HYMP112U64CP8-S6 1GB

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Crucial Technology CT51264BD1339.M16F 4GB

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A-DATA Technology AO1P24HC4R1-BSIS 4GB

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Kingston ACR16D3LS1NGG/4G 4GB

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Corsair CM4X8GE2400C16K4 8GB

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Kingston 9905403-156.A00LF 2GB

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Apacer Technology 78.CAGP7.AFW0C 8GB

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Samsung M391B5673FH0-CH9 2GB

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SK Hynix HMA851S6CJR6N-XN 4GB

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Corsair CM4X16GC3000C15K4 16GB

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Corsair CMK8GX4M1A2400C14 8GB

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Kingston 9905471-076.A00LF 8GB

Kingston 9905471-076.A00LF 8GB

Kingston X5H5PW-MIB 8GB

Kingston X5H5PW-MIB 8GB

Kingston 9965525-155.A00LF 8GB

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InnoDisk Corporation M4S0-8GS1NCIK 8GB

InnoDisk Corporation M4S0-8GS1NCIK 8GB

Kingston KF552C40-16 16GB

Kingston KF552C40-16 16GB

Team Group Inc. 16GB

Team Group Inc. 16GB

Samsung M378B5673EH1-CF8 2GB

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Kingston 9905625-036.A00G 16GB

Kingston 9905625-036.A00G 16GB