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Samsung M3 78T2953EZ3-CF7 1GB
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB

Samsung M3 78T2953EZ3-CF7 1GB vs Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB

总分
star star star star star
Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB

差异 规格 评论

差异

Samsung M3 78T2953EZ3-CF7 1GB 需要考虑的原因
Samsung M3 78T2953EZ3-CF7 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 13.8
    测试中的平均数值
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 58
    左右 -107% 更低的延时
  • 更快的写入速度，GB/s
    10.1 left arrow 1,950.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T2953EZ3-CF7 1GB
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    58 left arrow 28
  • 读取速度，GB/s
    4,241.0 left arrow 13.8
  • 写入速度，GB/s
    1,950.7 left arrow 10.1
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    651 left arrow 2179

Samsung M3 78T2953EZ3-CF7 1GB RAM的比较

Corsair VS1GB800D2 1GB
Kingston KVR800D2N6/2G 2GB

Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
AMD AE34G1601U1 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M3 78T2953EZ3-CF7 1GB
Samsung M3 78T2953EZ3-CF7 1GB
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Corsair CMT16GX4M2C3600C18 8GB
Corsair CMT16GX4M2C3600C18 8GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Micron Technology 8R8F1G64HZ-2G3B1 8GB
Micron Technology 8R8F1G64HZ-2G3B1 8GB
内存RAM
Apacer Technology 78.A1GC6.9H10C 2GB
Apacer Technology 78.A1GC6.9H10C 2GB
Micron Technology 8ATF1G64HZ-2G2G1 8GB
Micron Technology 8ATF1G64HZ-2G2G1 8GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Neo Forza NMUD416E82-3600 16GB
Neo Forza NMUD416E82-3600 16GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB
Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Crucial Technology CT8G4SFS6266.M4FB 8GB
Crucial Technology CT8G4SFS6266.M4FB 8GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Kingston 9905598-028.A00G 8GB
Kingston 9905598-028.A00G 8GB
内存RAM
Kingston 9905471-001.A01LF 2GB
Kingston 9905471-001.A01LF 2GB
Micron Technology 16GB 2133MHz DIMM 16GB
Micron Technology 16GB 2133MHz DIMM 16GB
内存RAM
Apacer Technology 78.A1GC6.9H10C 2GB
Apacer Technology 78.A1GC6.9H10C 2GB
Samsung M386A4G40DM1-CRC 32GB
Samsung M386A4G40DM1-CRC 32GB
内存RAM
Kingston KHX1600C9D3/4G 4GB
Kingston KHX1600C9D3/4G 4GB
Micron Technology 4ATF1G64HZ-3G2E1 8GB
Micron Technology 4ATF1G64HZ-3G2E1 8GB
内存RAM
Kingston 99U5474-013.A00LF 2GB
Kingston 99U5474-013.A00LF 2GB
Samsung M378A2G43MX3-CTD 16GB
Samsung M378A2G43MX3-CTD 16GB
内存RAM
Kingston 99U5458-008.A00LF 4GB
Kingston 99U5458-008.A00LF 4GB
Corsair CMU32GX4M4D3000C16 8GB
Corsair CMU32GX4M4D3000C16 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Corsair CMK32GX4M4A2400C12 8GB
Corsair CMK32GX4M4A2400C12 8GB
内存RAM