RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T2953EZ3-CF7 1GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB
比较
Samsung M3 78T2953EZ3-CF7 1GB vs Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB
总分
Samsung M3 78T2953EZ3-CF7 1GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 78T2953EZ3-CF7 1GB
报告一个错误
更快的读取速度,GB/s
4
14.6
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB
报告一个错误
低于PassMark测试中的延时,ns
27
58
左右 -115% 更低的延时
更快的写入速度,GB/s
10.5
1,950.7
测试中的平均数值
更高的内存带宽,mbps
17000
6400
左右 2.66 更高的带宽
规格
完整的技术规格清单
Samsung M3 78T2953EZ3-CF7 1GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
58
27
读取速度,GB/s
4,241.0
14.6
写入速度,GB/s
1,950.7
10.5
内存带宽,mbps
6400
17000
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
651
2409
Samsung M3 78T2953EZ3-CF7 1GB RAM的比较
Corsair VS1GB800D2 1GB
Kingston KVR800D2N6/2G 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB RAM的比较
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M3 78T2953EZ3-CF7 1GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N
Samsung M393B2G70BH0-CK0 16GB
SK Hynix HMA84GL7AFR4N-UH 32GB
Samsung M393B1K70CH0-CH9 8GB
Kingston MSI24D4S7S8S8-8 8GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Corsair CMK16GX4M2B4266C19 8GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Essencore Limited IM48GU88N26-GIIHA0 8GB
Kingston 9905403-515.A00LF 8GB
G Skill Intl F4-2800C14-16GTZ 16GB
Samsung M378T5663QZ3-CF7 2GB
Corsair CMR16GX4M2C 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Essencore Limited KD48GU880-32A160X 8GB
Samsung M393B2G70BH0-CH9 16GB
Corsair CMD16GX4M2C3333C16 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Wilk Elektronik S.A. GR2133D464L15/8G 8GB
SK Hynix HYMP112S64CP6-S6 1GB
Panram International Corporation L421008G4C1528K34O8A 8
Kingston KF552C40-16 16GB
Kingston 9905678-041.A00G 4GB
Kingston 9905471-006.A01LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA84GL7AMR4N
Crucial Technology BLT2G3D1608DT1TX0 2GB
Gloway International (HK) STKD4XMP2400-F 4GB
报告一个错误
×
Bug description
Source link