Samsung M3 78T2953EZ3-CF7 1GB vs Micron Technology 16ATF2G64HZ-2G6E3 16GB

总分

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

总分

Micron Technology 16ATF2G64HZ-2G6E3 16GB

Micron Technology 16ATF2G64HZ-2G6E3 16GB

差异规格评论

差异

Samsung M3 78T2953EZ3-CF7 1GB

需要考虑的原因
Samsung M3 78T2953EZ3-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 15.8

测试中的平均数值

Micron Technology 16ATF2G64HZ-2G6E3 16GB

需要考虑的原因
Micron Technology 16ATF2G64HZ-2G6E3 16GB

报告一个错误

低于PassMark测试中的延时，ns

34 58

左右 -71% 更低的延时
更快的写入速度，GB/s

12.4 1,950.7

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2953EZ3-CF7 1GB

Micron Technology 16ATF2G64HZ-2G6E3 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

58 34
读取速度，GB/s

4,241.0 15.8
写入速度，GB/s

1,950.7 12.4
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

651 2902

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KF560C40-16 16GB

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Samsung M471B5173DB0-YK0 4GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

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Micron Technology 8R8F1G64HZ-2G3B1 8GB

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SK Hynix HYMP112S64CP6-S6 1GB

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Apacer Technology 78.B1GQB.4010B 4GB