Samsung M3 78T2953EZ3-CF7 1GB vs Micron Technology 8ATF1G64AZ-2G3A1 8GB

总分

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

总分

Micron Technology 8ATF1G64AZ-2G3A1 8GB

Micron Technology 8ATF1G64AZ-2G3A1 8GB

差异规格评论

差异

Samsung M3 78T2953EZ3-CF7 1GB

需要考虑的原因
Samsung M3 78T2953EZ3-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 14.8

测试中的平均数值

Micron Technology 8ATF1G64AZ-2G3A1 8GB

需要考虑的原因
Micron Technology 8ATF1G64AZ-2G3A1 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 58

左右 -132% 更低的延时
更快的写入速度，GB/s

10.6 1,950.7

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2953EZ3-CF7 1GB

Micron Technology 8ATF1G64AZ-2G3A1 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

58 25
读取速度，GB/s

4,241.0 14.8
写入速度，GB/s

1,950.7 10.6
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

651 2695

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Transcend Information TS512MLH64V1H 4GB

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Micron Technology 16JTF51264HZ-1G6M1 4GB

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SK Hynix HMA82GR7AFR8N-UH 16GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Corsair CMSX64GX4M4A2666C18 16GB

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Crucial Technology CT4G4SFS824A.M8FB 4GB

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Crucial Technology BLS8G4S26BFSDK.8FD 8GB

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SK Hynix HMT451S6BFR8A-PB 4GB

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Essencore Limited IM48GU48N28-GGGHM 8GB

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Samsung M393B1G70BH0-YK0 8GB

Mushkin 99[2/7/4]192[F/T] 4GB

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Samsung M471B1G73QH0-YK0 8GB

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Kingston 9905625-076.A00G 8GB

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SK Hynix HMA81GR7AFR8N-VK 8GB

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Crucial Technology CT8G4DFRA266.M4FE 8GB

Crucial Technology CT8G4DFRA266.M4FE 8GB