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Samsung M3 78T2953EZ3-CF7 1GB
Micron Technology 8ATF1G64AZ-2G3A1 8GB

Samsung M3 78T2953EZ3-CF7 1GB vs Micron Technology 8ATF1G64AZ-2G3A1 8GB

总分
star star star star star
Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

总分
star star star star star
Micron Technology 8ATF1G64AZ-2G3A1 8GB

Micron Technology 8ATF1G64AZ-2G3A1 8GB

差异 规格 评论

差异

Samsung M3 78T2953EZ3-CF7 1GB 需要考虑的原因
Samsung M3 78T2953EZ3-CF7 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 14.8
    测试中的平均数值
Micron Technology 8ATF1G64AZ-2G3A1 8GB 需要考虑的原因
Micron Technology 8ATF1G64AZ-2G3A1 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 58
    左右 -132% 更低的延时
  • 更快的写入速度，GB/s
    10.6 left arrow 1,950.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T2953EZ3-CF7 1GB
Micron Technology 8ATF1G64AZ-2G3A1 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    58 left arrow 25
  • 读取速度，GB/s
    4,241.0 left arrow 14.8
  • 写入速度，GB/s
    1,950.7 left arrow 10.6
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    651 left arrow 2695

Samsung M3 78T2953EZ3-CF7 1GB RAM的比较

Corsair VS1GB800D2 1GB
Kingston KVR800D2N6/2G 2GB

Micron Technology 8ATF1G64AZ-2G3A1 8GB RAM的比较

Kingston HP32D4U8S8HC-8XR 8GB
SpecTek Incorporated ?????????????????? 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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