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Samsung M3 78T2953EZ3-CF7 1GB
Team Group Inc. TEAMGROUP-UD4-2400 8GB

Samsung M3 78T2953EZ3-CF7 1GB vs Team Group Inc. TEAMGROUP-UD4-2400 8GB

总分
star star star star star
Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

总分
star star star star star
Team Group Inc. TEAMGROUP-UD4-2400 8GB

Team Group Inc. TEAMGROUP-UD4-2400 8GB

差异 规格 评论

差异

Samsung M3 78T2953EZ3-CF7 1GB 需要考虑的原因
Samsung M3 78T2953EZ3-CF7 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 15.9
    测试中的平均数值
Team Group Inc. TEAMGROUP-UD4-2400 8GB 需要考虑的原因
Team Group Inc. TEAMGROUP-UD4-2400 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 58
    左右 -81% 更低的延时
  • 更快的写入速度，GB/s
    11.5 left arrow 1,950.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T2953EZ3-CF7 1GB
Team Group Inc. TEAMGROUP-UD4-2400 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    58 left arrow 32
  • 读取速度，GB/s
    4,241.0 left arrow 15.9
  • 写入速度，GB/s
    1,950.7 left arrow 11.5
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    651 left arrow 2991

Samsung M3 78T2953EZ3-CF7 1GB RAM的比较

Corsair VS1GB800D2 1GB
Kingston KVR800D2N6/2G 2GB

Team Group Inc. TEAMGROUP-UD4-2400 8GB RAM的比较

Kingston 9905403-444.A00LF 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
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Kingston XJ69DF-HYA 8GB
内存RAM
Samsung M3 78T2953EZ3-CF7 1GB
Samsung M3 78T2953EZ3-CF7 1GB
Team Group Inc. TEAMGROUP-UD4-2400 8GB
Team Group Inc. TEAMGROUP-UD4-2400 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Apacer Technology 76.D105G.D090B 16GB
Apacer Technology 76.D105G.D090B 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 9ASF1G72AZ-2G3B1 8GB
Micron Technology 9ASF1G72AZ-2G3B1 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
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Crucial Technology BLS8G4S26BFSD.16FBR2 8GB
内存RAM
Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Corsair CMWX16GC3000C16W4D 16GB
Corsair CMWX16GC3000C16W4D 16GB
内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
Corsair CM4X8GE3000C15K4 8GB
Corsair CM4X8GE3000C15K4 8GB
内存RAM
Micron Technology 8JSF25664HZ-1G4D1 2GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Kingston 9905702-027.A00G 8GB
Kingston 9905702-027.A00G 8GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Corsair CMK16GX4M2C3600C20 8GB
Corsair CMK16GX4M2C3600C20 8GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Crucial Technology BLM8G44C19U4BL.M8FE1 8GB
Crucial Technology BLM8G44C19U4BL.M8FE1 8GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
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Essencore Limited IM48GU88A30-FGGHMB 8GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-2400C16-16GFT 16GB
G Skill Intl F4-2400C16-16GFT 16GB
内存RAM
SK Hynix HMT425S6CFR6A-PB 2GB
SK Hynix HMT425S6CFR6A-PB 2GB
Transcend Information JM3200HLE-16G 16GB
Transcend Information JM3200HLE-16G 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 99U5734-014.A00G 16GB
Kingston 99U5734-014.A00G 16GB
内存RAM